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SI4636DY-T1-E3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 74961
S09-0394-Rev. C, 09-Mar-09
Vishay Siliconix
Si4636DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Reverse Current (Schottky)
0.0 0.2 0.4 0.6 0.8 1.0
10
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
150 °C
25 °C
0.1
1
0.01
100
0 25 50 75 100 125 150
0.001
20 V
T
J
- Temperature (°C)
- Reverse (A)I
R
1
0.1
0.01
30 V
0.0001
0.00001
On-Resistance vs. Gate-to-Source Voltage
Junction-to-Ambient
0.000
0.010
0.020
0.030
0.040
0.050
012345678 910
I
D
= 10 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
125 °C
25 °C
0
40
80
120
160
200
Power (W)
Time (s)
1100.10.010.001
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
100
1
0.1 1 10 100
0.01
10
1 ms
- Drain Current (A)
I
D
0.1
T
C
= 25 °C
Single Pulse
10 ms
100 ms
DC
1 s
10 s
Limited by R
DS(on)
*
* V
GS
minimum V
GS
at which R
DS(on)
is specified
Document Number: 74961
S09-0394-Rev. C, 09-Mar-09
www.vishay.com
5
Vishay Siliconix
Si4636DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
4
8
12
16
20
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power Derating, Junction-to-Foot
0.0
1.1
2.2
3.3
4.4
5.5
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power Derating, Junction-to-Ambient
0.00
0.34
0.68
1.02
1.36
1.70
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 74961
S09-0394-Rev. C, 09-Mar-09
Vishay Siliconix
Si4636DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74961
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
000110110
-1
10
-4
100
0.2
0.1
0.05
0.02
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.05
0.02
Single Pulse
P1-P3P4-P6P7-P7

SI4636DY-T1-E3

Mfr. #:
Buy SI4636DY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V 17A 4.4W
Lifecycle:
New from this manufacturer.
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