VS-86HF120

Document Number: 93529 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 25-May-09 1
Standard Recovery Diodes,
(Stud Version), 85 A
85HF(R) Series
Vishay Semiconductors
FEATURES
High surge current capability
Stud cathode and stud anode version
Leaded version available
Types up to 1600 V V
RRM
Compliant to RoHS directive 2002/95/EC
Designed and qualified for industrial level
TYPICAL APPLICATIONS
Battery chargers
Converters
Power supplies
Machine tool controls
Welding
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
I
F(AV)
85 A
DO-203AB (DO-5)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS
85HF(R)
UNITS
10 TO 120 140/160
I
F(AV)
85
A
T
C
140 110
°C
I
F(RMS)
133
A
I
FSM
50 Hz 1700
A
60 Hz 1800
I
2
t
50 Hz 14 500
A
2
s
60 Hz 13 500
V
RRM
Range 100 to 1200 1400/1600 V
T
J
- 65 to 180 - 65 to 150 °C
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
85HF(R)
10 100 200
9
20 200 300
40 400 500
60 600 700
80 800 900
100 1000 1100
120 1200 1300
140 1400 1500
4.5
160 1600 1700
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 93529
2 Revision: 25-May-09
85HF(R) Series
Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 85 A
Notes
(1)
Available only for 88HF
(2)
Recommended for pass-through holes
(3)
Recommended for holed threaded heatsinks
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
85HF(R)
UNITS
10 to 120 140/160
Maximum average forward current
at case temperature
I
F(AV)
180° conduction, half sine wave
85 A
140 110 °C
Maximum RMS forward current I
F(RMS)
133 A
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
1700
A
t = 8.3 ms 1800
t = 10 ms
100 % V
RRM
reapplied
1450
t = 8.3 ms 1500
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
14 500
A
2
s
t = 8.3 ms 13 500
t = 10 ms
100 % V
RRM
reapplied
10 500
t = 8.3 ms 9400
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 16 000
A
2
s
Value of threshold voltage
(up to 1200 V)
V
F(TO)
T
J
= T
J
maximum
0.68
V
Value of threshold voltage
(for 1400 V, 1600 V)
0.69
Value of forward slope resistance
(up to 1200 V)
r
f
T
J
= T
J
maximum
1.62
m
Value of forward slope resistance
(for 1400 V, 1600 V)
1.75
Maximum forward voltage drop V
FM
I
pk
= 267 A, T
J
= 25 °C, t
p
= 400 µs rectangular wave 1.2 1.4 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
85HF(R)
UNITS
10 to 120 140/160
Maximum junction operating and
storage temperature range
T
J
, T
Stg
- 65 to 180 - 65 to 150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.35
K/W
Maximum thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth, flat and greased 0.25
Maximum shock
(1)
1500
g
Maximum constant vibration
(1)
50 Hz
20
Maximum constant acceleration
(1)
Stud outwards
5000
Maximum allowable mounting
torque (+ 0 %, - 10 %)
Not lubricated thread, tighting on nut
(2)
3.4 (30)
N · m
(lbf · in)
Lubricated thread, tighting on nut
(2)
2.3 (20)
Not lubricated thread, tighting on hexagon
(3)
4.2 (37)
Lubricated thread, tighting on hexagon
(3)
3.2 (28)
Approximate weight Unleaded device
17 g
0.6 oz.
Case style See dimensions - link at the end of datasheet DO-203AB (DO-5)
Document Number: 93529 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 25-May-09 3
85HF(R) Series
Standard Recovery Diodes,
(Stud Version), 85 A
Vishay Semiconductors
Note
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
R
thJC
CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180°
0.10 0.08
T
J
= T
J
maximum K/W
120°
0.11 0.11
90°
0.13 0.13
60°
0.17 0.17
30°
0.26 0.26
)A( tnerruC drawroF egarevA
Maximum Allowable Case Temperature (°C)
130
140
150
160
170
180
0 1020304050607080 90 100
30°
60°
90°
120°
180°a
Conduction Angle
85HF(R) Series (100V to 1200V)
RthJC (DC) = 0.35 K/W
)A( tnerruC drawroF egarevA
Maximum Allowable Case Temperature (°C)
130
140
150
160
170
180
020406080 100 120 140
DC
30°
60°
90°
120°
18
Conduction Period
85HF(R) Series (100V to 1200V)
RthJC (DC) = 0.35 K/W
Average Forward Current (A)
Maximum Allowable Case Temperature (°C)
100
110
120
130
140
150
0 1020304050607080 90 100
30°
60°
90°
120°
18
Conduction Angle
85HF(R) Series (1400V to 1600V)
RthJC (DC) = 0.35 K/W
Average Forward Current (A)
Maximum Allowable Case Temperature (°C)
100
110
120
130
140
150
020406080 100 120 140
DC
30
°
60
°
90
°
120
°
180
°
Conduction Period
85HF(R) Series (1400V to 1600V)
RthJC (DC) = 0.35 K/W

VS-86HF120

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1200 Volt 85 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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