www.vishay.com Document Number: 91221
4 S11-0448-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP32N50K, SiHFP32N50K
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
1
10
100
1000
10
100
1000
10 000
100 000
C, Capacitance (pF)
V
DS
, Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
V
DS
= 400 V
V
DS
= 250 V
V
DS
= 100 V
I
D
= 32 A
0
40
80
120
160
200
0
4
8
12
16
20
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
1000
0.2
0.9
0.6
1.3
1.6
0.1
100
10
1
T
J
= 150 °C
T
J
= 25 °C
V
GS
= 0 V
OPERATING IN THIS AREA LIMITED
BY R
DS(on)
10 ms
1 ms
100 μs
10 μs
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
100
1000
10000
1
10
100
1000
I
D
, Drain Current (A)
V
DS
, Drain-to-Source Voltage (V)
