SUD50N024-09P-E3 Datasheet SUD50N024-09P-E3 | P1-P3

FEATURES

D TrenchFETr Power MOSFET

D 175_C Junction Temperature

D PWM Optimized for High Efficiency

APPLICATIONS

D High-Side Synchronous Buck DC/DC

Conversion

− Desktop

− Server

SUD50N024-09P

Vishay Siliconix

Document Number: 72290

S-41168—Rev. B, 14-Jun-04

www.vishay.com

1

N-Channel 22-V (D-S) 175_C MOSFET

PRODUCT SUMMARY

V

DS

(V) r

DS(on)

(W) I

D

(A)

d

24

c

0.0095 @ V

GS

= 10 V 49

24

c

0.017 @ V

GS

= 4.5 V 36

D

G

S

N-Channel MOSFET

TO-252

SGD

Top View

Drain Connected to Tab

Ordering Information: SUD50N024-09P

SUD50N024-09P—E3 (Lead Free)

ABSOLUTE MAXIMUM RATINGS (T

A

= 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Pulse Voltage V

DS(pulse)

24

C

Drain-Source Voltage V

DS

22

V

Gate-Source Voltage V

GS

"20

Continuous Drain Current

a

T

C

= 25_C

I

D

49d

Continuous Drain Current

a

T

C

= 100_C

I

D

34

d

Pulsed Drain Current I

DM

100

A

Continuous Source Current (Diode Conduction)

a

I

S

4.3

Avalanche Current, Single Pulse L = 0.1 mH I

AS

29

Avalanche Energy, Single Pulse E

AS

42 mJ

Maximum Power Dissipation

T

A

= 25_C

P

D

6.5

a

W

Maximum Power Dissipation

T

C

= 25_C

P

D

39.5

W

Operating Junction and Storage Temperature Range T

J

, T

stg

−55 to 175 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction to Ambient

a

t v 10 sec

R

19 23

Maximum Junction-to-Ambient

a

Steady State

R

thJA

40 50

_C/W

Maximum Junction-to-Case R

thJC

3.1 3.8

C/W

Notes

a. Surface Mounted on FR4 Board, t v 10 sec.

b. Limited by package

c. Pulse condition: T

A

= 105_C, 50 ns, 300 kHz operation

d. Calculation based on maximum allowable Junction Temperature. Package limitation current is 25 A.

SUD50N024-09P

Vishay Siliconix

www.vishay.com

2

Document Number: 72290

S-41168—Rev. B, 14-Jun-04

SPECIFICATIONS (T

J

= 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ

a

Max Unit

Static

Drain-Source Breakdown Voltage V

(BR)DSS

V

GS

= 0 V, I

D

= 250 mA

22

V

Gate Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 mA 0.8 3.0

V

Gate-Body Leakage I

GSS

V

DS

= 0 V, V

GS

= "20 V

"100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 20 V, V

GS

= 0 V 1

mA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 20 V, V

GS

= 0 V, T

J

= 125_C 50

mA

On-State Drain Current

b

I

D(on)

V

DS

= 5 V, V

GS

= 10 V 50 A

V

GS

= 10 V, I

D

= 20 A 0.008 0.0095

Drain-Source On-State Resistance

b

r

DS(on)

V

GS

= 10 V, I

D

= 20 A, T

J

= 125_C 0.014

W

Drain Source On State Resistance

r

DS(on)

V

GS

= 4.5 V, I

D

= 20 A 0.0135 0.017

W

Forward Transconductance

b

g

fs

V

DS

= 15 V, I

D

= 20 A 15 S

Dynamic

a

Input Capacitance C

iss

1300

Output Capacitance C

oss

V

GS

= 0 V, V

DS

= 10 V, f = 1 MHz

470 pF

Reverse Transfer Capacitance C

rss

275

p

Gate Resistance R

g

1.6 4.0 6 W

Total Gate Charge

c

Q

g

10.5 16

Gate-Source Charge

c

Q

gs

V

DS

= 10 V, V

GS

= 4.5 V, I

D

= 50 A

4.2

nC

Gate-Drain Charge

c

Q

gd

V

DS

10 V, V

GS

4.5 V, I

D

50 A

4.0

nC

Turn-On Delay Time

c

t

d(on)

8 12

Rise Time

c

t

r

V

DD

= 10 V, R

L

= 0.2 W

10 15

ns

Turn-Off Delay Time

c

t

d(off)

V

DD

= 10 V

,

R

L

= 0

.

2 W

I

D

^ 50 A, V

GEN

= 10 V, R

g

= 2.5 W

25 40

ns

Fall Time

c

t

f

g

12 20

Source-Drain Diode Ratings and Characteristic (T

C

= 25_C)

Pulsed Current I

SM

100 A

Diode Forward Voltage

b

V

SD

I

F

= 50 A, V

GS

= 0 V 1.2 1.5 V

Source-Drain Reverse Recovery Time t

rr

I

F

= 50 A, di/dt = 100 A/ms 35 70 ns

Notes

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width v

300 ms, duty cycle v 2%.

c. Independent of operating temperature.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

20

40

60

80

100

0246810

0

20

40

60

80

100

0123456

Output Characteristics Transfer Characteristics

V

DS

− Drain-to-Source Voltage (V)

− Drain Current (A)I

D

V

GS

− Gate-to-Source Voltage (V)

− Drain Current (A)I

D

25_C

125_C

T

C

= −55_C

V

GS

= 10 thru 6 V

3 V

4 V

5 V

SUD50N024-09P

Vishay Siliconix

Document Number: 72290

S-41168—Rev. B, 14-Jun-04

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.000

0.005

0.010

0.015

0.020

0.025

0.030

0 20406080100

0

2

4

6

8

10

048121620

0

10

20

30

40

50

60

0 1020304050

0

400

800

1200

1600

2000

048121620

Capacitance Gate Charge

Transconductance On-Resistance vs. Drain Current

− Gate-to-Source Voltage (V) − On-Resistance (

Q

g

− Total Gate Charge (nC)

I

D

− Drain Current (A)

V

DS

− Drain-to-Source Voltage (V)

C − Capacitance (pF)

r

DS(on)

W )V

GS

− Transconductance (S)g

fs

V

DS

= 10 V

I

D

= 50 A

V

GS

= 10 V

V

GS

= 4.5 V

C

rss

T

C

= −55_C

25_C

125_C

C

iss

I

D

− Drain Current (A)

C

oss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

−50 −25 0 25 50 75 100 125 150 175

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

T

J

− Junction Temperature (_C) V

SD

− Source-to-Drain Voltage (V)

− Source Current (A)I

S

100

1

0.3 0.6 0.9 1.2 1.5

V

GS

= 10 V

I

D

= 30 A

T

J

= 25_C

T

J

= 150_C

0

10

r

DS(on)

− On-Resiistance

(Normalized)

SUD50N024-09P-E3

SUD50N024-09P-E3

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