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FF400R12KT3EHOSA1

P1-P3P4-P6P7-P8
62mmC-SerienModulmitgemeinsamenEmitter
62mmC-seriesmodulewithcommonemitter
1
TechnischeInformation/TechnicalInformation
FF400R12KT3_E
IGBT-Module
IGBT-modules
preparedby:MK
approvedby:WR
dateofpublication:2013-11-04
revision:2.0
VorläufigeDaten
PreliminaryDataIGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
T
vj
= 25°C V
CES
1200 V
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
I
C nom
I
C
400
580
A
A
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
t
P
= 1 ms I
CRM
800 A
Gesamt-Verlustleistung
Totalpowerdissipation
T
C
= 25°C, T
vj max
= 150°C P
tot
2000 W
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
V
GES
+/-20 V
CharakteristischeWerte/CharacteristicValues
min. typ. max.
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
I
C
= 400 A, V
GE
= 15 V
I
C
= 400 A, V
GE
= 15 V
V
CE sat
1,70
1,90
2,15
V
V
T
vj
= 25°C
T
vj
= 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
I
C
= 16,0 mA, V
CE
= V
GE
, T
vj
= 25°C V
GEth
5,0 5,8 6,5 V
Gateladung
Gatecharge
V
GE
= -15 V ... +15 V Q
G
3,70 µC
InternerGatewiderstand
Internalgateresistor
T
vj
= 25°C R
Gint
1,9 Ω
Eingangskapazität
Inputcapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
ies
28,0 nF
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
res
1,10 nF
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C I
CES
5,0 mA
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C I
GES
400 nA
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
I
C
= 400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 1,8 Ω
t
d on
0,16
0,17
µs
µs
T
vj
= 25°C
T
vj
= 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
I
C
= 400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 1,8 Ω
t
r
0,04
0,045
µs
µs
T
vj
= 25°C
T
vj
= 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
I
C
= 400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 1,8 Ω
t
d off
0,45
0,52
µs
µs
T
vj
= 25°C
T
vj
= 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
I
C
= 400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 1,8 Ω
t
f
0,10
0,16
µs
µs
T
vj
= 25°C
T
vj
= 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
I
C
= 400 A, V
CE
= 600 V, L
S
= 30 nH
V
GE
= ±15 V, di/dt = 8000 A/µs
R
Gon
= 1,8 Ω
E
on
18,0
28,0
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
I
C
= 400 A, V
CE
= 600 V, L
S
= 30 nH
V
GE
= ±15 V, du/dt = 4500 V/µs
R
Goff
= 1,8 Ω
E
off
30,0
45,0
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
Kurzschlußverhalten
SCdata
V
GE
≤ 15 V, V
CC
= 900 V
V
CEmax
= V
CES
-L
sCE
·di/dt
I
SC
1600
A
T
vj
= 125°C
t
P
≤ 10 µs,
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT R
thJC
0,062 K/W
Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink
proIGBT/perIGBT
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
R
thCH
0,03 K/W
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
T
vj op
-40 125 °C
2
TechnischeInformation/TechnicalInformation
FF400R12KT3_E
IGBT-Module
IGBT-modules
preparedby:MK
approvedby:WR
dateofpublication:2013-11-04
revision:2.0
VorläufigeDaten
PreliminaryData
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
T
vj
= 25°C V
RRM
1200 V
Dauergleichstrom
ContinuousDCforwardcurrent
I
F
400 A
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
t
P
= 1 ms I
FRM
800 A
Grenzlastintegral
I²t-value
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C I²t 34000 A²s
CharakteristischeWerte/CharacteristicValues
min. typ. max.
Durchlassspannung
Forwardvoltage
I
F
= 400 A, V
GE
= 0 V
I
F
= 400 A, V
GE
= 0 V
V
F
1,65
1,65
2,15
V
V
T
vj
= 25°C
T
vj
= 125°C
Rückstromspitze
Peakreverserecoverycurrent
I
F
= 400 A, - di
F
/dt = 8000 A/µs (T
vj
=125°C)
V
R
= 600 V
V
GE
= -15 V
I
RM
400
480
A
A
T
vj
= 25°C
T
vj
= 125°C
Sperrverzögerungsladung
Recoveredcharge
I
F
= 400 A, - di
F
/dt = 8000 A/µs (T
vj
=125°C)
V
R
= 600 V
V
GE
= -15 V
Q
r
44,0
80,0
µC
µC
T
vj
= 25°C
T
vj
= 125°C
AbschaltenergieproPuls
Reverserecoveryenergy
I
F
= 400 A, - di
F
/dt = 8000 A/µs (T
vj
=125°C)
V
R
= 600 V
V
GE
= -15 V
E
rec
20,0
37,0
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode R
thJC
0,11 K/W
Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink
proDiode/perdiode
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
R
thCH
0,06 K/W
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
T
vj op
-40 125 °C
3
TechnischeInformation/TechnicalInformation
FF400R12KT3_E
IGBT-Module
IGBT-modules
preparedby:MK
approvedby:WR
dateofpublication:2013-11-04
revision:2.0
VorläufigeDaten
PreliminaryData
Modul/Module
Isolations-Prüfspannung
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min. V
ISOL
2,5 kV
MaterialModulgrundplatte
Materialofmodulebaseplate
Cu
InnereIsolation
Internalisolation
Basisisolierung(Schutzklasse1,EN61140)
basicinsulation(class1,IEC61140)
Al
2
O
3
Kriechstrecke
Creepagedistance
Kontakt-Kühlkörper/terminaltoheatsink
Kontakt-Kontakt/terminaltoterminal
29,0
23,0
mm
Luftstrecke
Clearance
Kontakt-Kühlkörper/terminaltoheatsink
Kontakt-Kontakt/terminaltoterminal
23,0
11,0
mm
VergleichszahlderKriechwegbildung
Comperativetrackingindex
CTI > 400
min. typ. max.
Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink
proModul/permodule
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
R
thCH
0,01 K/W
Modulstreuinduktivität
Strayinductancemodule
L
sCE
20 nH
Modulleitungswiderstand,Anschlüsse-
Chip
Moduleleadresistance,terminals-chip
T
C
=25°C,proSchalter/perswitch R
CC'+EE'
0,70 mΩ
Lagertemperatur
Storagetemperature
T
stg
-40 125 °C
Anzugsdrehmomentf.Modulmontage
Mountingtorqueformodulmounting
SchraubeM6-Montagegem.gültigerApplikationsschrift
ScrewM6-Mountingaccordingtovalidapplicationnote
M 3,00 - 6,00 Nm
Anzugsdrehmomentf.elektr.Anschlüsse
Terminalconnectiontorque
SchraubeM6-Montagegem.gültigerApplikationsschrift
ScrewM6-Mountingaccordingtovalidapplicationnote
M 2,5 - 5,0 Nm
Gewicht
Weight
G 340 g
P1-P3P4-P6P7-P8

FF400R12KT3EHOSA1

Mfr. #:
Buy FF400R12KT3EHOSA1
Manufacturer:
Infineon Technologies
Description:
IGBT MODULE VCES 650V 400A
Lifecycle:
New from this manufacturer.
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