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IRCUITS
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CPC7695
R01 www.ixysic.com 13
1.8 Voltage and Power Specifications
Parameter Test Conditions Symbol Minimum Typical Maximum Unit
Voltage Requirements
V
DD
-
V
DD
4.5 5.0 5.5 V
V
BAT
1
-
V
BAT
-19 -48 -72 V
1
V
BAT
is used only for internal protection circuitry. If V
BAT
rises above -10V, the device will enter the All-Off state and will remain in the All-Off state until the battery
drops below -15V
Power Specifications
Power consumption
V
DD
= 5V, V
BAT
= -48V, V
IH
= 2.4V,
V
IL
= 0.4V, Measure I
DD
and I
BAT
Talk and All-Off States
P-
4.7 10.5 mW
All other states 5.2 10.5 mW
V
DD
current
V
DD
= 5V, V
BAT
= -48V, V
IH
= 2.4V,
V
IL
= 0.4V
Talk and All-Off states
I
DD
-
0.9 2.0
mA
All other states 1.0 2.0
V
BAT
current in any state
V
DD
= 5V, V
BAT
= -48V, V
IH
= 2.4V,
V
IL
=0.4V
I
BAT
-410A
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14 www.ixysic.com R01
1.9 Protection Circuitry Electrical Specifications
Parameter Conditions Symbol Minimum Typical Maximum Unit
Protection Diode Bridge
Forward Voltage drop,
continuous current
(50/60 Hz)
Apply ± DC current limit of break
switches
V
F
-
2.8 3.5
V
Forward Voltage drop,
surge current
Apply ± dynamic current limit of break
switches
5-
Protection SCR (CPC7695xA and CPC7695xC)
Surge current - - - - * A
Trigger current:
Current into V
BAT
pin.
SCR activates, +25°C
I
TRIG
-
150
-mA
SCR activates, +85°C 80
Hold current: Current
through protection SCR
SCR remains active, +25°C
I
HOLD
- 220
-mA
SCR remains active, +85°C 110 145
Gate trigger voltage
I
GATE
= I
TRIGGER
§
V
TBAT
or
V
RBAT
V
BAT
-4
-
V
BAT
-2
V
Reverse leakage current
V
BAT
= -48V I
VBAT
--1.0A
On-state voltage
0.5A, t = 0.5 sV
TBAT
or
V
RBAT
-
-3
-V
2.0A, t = 0.5 s-5
Temperature Shutdown Specifications
Shutdown activation
temperature
Not production tested - limits are
guaranteed by design and Quality
Control sampling audits.
T
TSD_on
110 125 150 °C
Shutdown circuit
hysteresis
T
TSD_off
10 - 25 °C
*Passes GR1089 and ITU-T K.20 with appropriate secondary protection in place.
§
V
BAT
must be capable of sourcing I
TRIGGER
for the internal SCR to activate.
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CPC7695
R01 www.ixysic.com 15
1.10 Truth Tables
1.10.1 Truth Table for CPC7695xA and CPC7695xB
1.10.2 Truth Table for CPC7695xC
State
IN
RINGING
IN
TESTin
IN
TESTout
Latch
T
SD
TESTin
Switches
Break
Switches
Ringing
Test
Switches
Ringing
Switches
TESTout
Switches
Talk000
0
Z
1
Off On Off Off Off
TESTout 0 0 1 Off Off Off Off
On
TESTin010
On Off Off Off Off
Simultaneous
TESTin and
TESTout
011
On Off Off Off On
Ringing 1 0 0 Off Off Off
On Off
Ringing
Generator
Te s t
110 OffOff
On Off Off
Latched X X X 1 Unchanged Unchanged Unchanged Unchanged Unchanged
All-Off
1 0 1 0 Off Off Off Off Off
1 1 1 0 Off Off Off Off Off
X X X X 0 Off Off Off Off Off
1
Z = High Impedance. Because T
SD
has an internal pull up at this pin, it should be controlled with an open-collector or open-drain type device.
State
IN
RINGING
IN
TESTin
IN
TESTout
Latch
T
SD
TESTin
Switches
Break
Switches
Ringing
Test
Switches
Ringing
Switches
TESTout
Switches
Talk000
0
Z
1
Off On Off Off Off
TESTout 0 0 1 Off Off Off Off
On
TESTin010
On Off Off Off Off
Simultaneous
TESTin and
TESTout
011
On Off Off Off On
Ringing 1 0 0 Off Off Off
On Off
Ringing
Generator
Te s t
110 OffOff
On Off Off
Simultaneous
TESTout and
Ringing
Generator
Te s t
111 OffOff
On Off On
Latched X X X 1 Unchanged Unchanged Unchanged Unchanged Unchanged
All-Off
1 0 1 0 Off Off Off Off Off
X X X X 0 Off Off Off Off Off
1
Z = High Impedance. Because T
SD
has an internal pull up at this pin, it should be controlled with an open-collector or open-drain type device.

CPC7695ZA

Mfr. #:
Manufacturer:
IXYS Integrated Circuits
Description:
Switch ICs - Various LCASw/Protection SCR 20-Pin SOIC
Lifecycle:
New from this manufacturer.
Delivery:
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