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NCP5212TMNTXG

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
NCP5212A, NCP5212T
http://onsemi.com
7
ELECTRICAL CHARACTERISTICS (V
IN
= 12 V, V
CC
= V
CCP
= 5 V, T
A
=−40°C to 85°C, unless other noted)
Characteristics UnitMaxTypMinTest ConditionsSymbol
OSCILLATOR
Operation Frequency
F
SW
270 300 330 kHz
OVERCURRENT THRESHOLD
Total Detection Time
T
DETECT
Period of FB shorts to ground before
SS
1.26 1.92 2.21 ms
OCSET Detection Time T_OCDET (Note 2) 1.09 1.47 ms
INTERNAL SOFT−START
Soft−Start Time
TSS 0.9 1.1 1.3 ms
VOLTAGE ERROR AMPLIFIER
DC Gain
GAIN_VEA (Note 2) 88 dB
Unity Gain Bandwidth BW_VEA (Note 2) 15 MHz
Slew Rate SR_VEA COMP PIN TO GND = 100 pF
(Note 2)
2.5
V/ms
FB Bias Current Ibias_FB 0.1
mA
Output Voltage Swing
Vmax_EA Isource_EA = 2 mA 3.3 3.5 V
Vmin_EA Isink_EA = 2 mA 0.15 0.3 V
DIFFERENTIAL CURRENT SENSE AMPLIFIER
CS+ and CS− Common−mode Input
Signal Range
VCSCOM_MAX Refer to AGND 3.5 V
Input Bias Current CS_IIB −100 100 nA
Input Signal Range CS_range −70 70 mV
Offset Current at IDRP IDRP_offset (CS+) − (CS−) = 0 V −1.0 1.0
mA
[(CS+)−(CS−)] to IDRP Gain IDRP_GAIN
(IDRP/((CS+)
− (CS−)))
(CS+) − (CS−) =
10 mV, V(IDRP) =
0.8 V
T
A
= 25°C 0.475 0.525 0.575
mA/mV
T
A
= −40°C to
85°C
0.425 0.625
mA/mV
Current−Sense Bandwidth BW_CS
At −3dB to DC Gain (Note 2)
20 MHz
Maximum IDRP Output Voltage IDRP_Max (CS+) − (CS−) = 70 mV, Isource drops
to 95% of the value when V
(IDRP)
=
0.8 V
2.5 V
Minimum IDRP Output Voltage IDRP_Min 0 V
IDRP Output current I_IDRP −1.0 35
mA
OVERCURRENT PROTECTION SETTING
Overcurrent Threshold (OCTH)
Detection Current
I_OCSET Sourced from OCP before soft−start,
Rocset = 16.7 kW is connected from
OCP to AGND or FB
21.6 24 26.4
mA
Ratio of OC Threshold over OCSET
Votlage
K_OCSET V((CS+) − (CS−)) / V_OCSET
(Note 2)
0.1 −
OCSET Voltage for Default Fixed OC
Threshold
VOCSET_DFT
Rocset v 2 kW is connected from
OCP to AGND or FB
100 mV
OCSET Voltage for Adjustable OC
Threshold
VOCSET_ADJ
Rocset = 8.3 ~ 25 kW is connected
from OCP to AGND or FB
200 600 mV
OCSET Voltage for OC Disable VOCSET_DIS
Rocset w 35 kW is connected from
OCP to AGND or FB
720 mV
Default Fixed OC Threshold V_OCTH_DFT (CS+) – (CS−), Pin OCP is shorted to
AGND or FB
35 40 45 mV
2. Guaranteed by design, not tested in production.
NCP5212A, NCP5212T
http://onsemi.com
8
ELECTRICAL CHARACTERISTICS (V
IN
= 12 V, V
CC
= V
CCP
= 5 V, T
A
=−40°C to 85°C, unless other noted)
Characteristics UnitMaxTypMinTest ConditionsSymbol
OVERCURRENT PROTECTION SETTING
Adjustable OC Threshold V_OCTH
((CS+)−(CS−))
(CS+) – (CS−),
During OC
threshold, set a
voltage at pin
OCP
VOCSET =
200 mV
15 20 25
mV
VOCSET =
600 mV
52 60 68
GATE DRIVERS
DH Pull−HIGH Resistance
RH_DH 200 mA Source current 1
W
DH Pull−LOW Resistance RL_DH 200 mA Sink current 1
W
DL Pull−HIGH Resistance RH_DL 200 mA Source current 1
W
DL Pull−LOW Resistance RL_DL 200 mA Sink current 0.5
W
DH Source Current Isource_DH (Note 2) 2.5 A
DH Sink Current Isink_DH (Note 2) 2.5 A
DL Source Current Isource_DL (Note 2) 2.5 A
DL Sink Current Isink_DL (Note 2) 5 A
Dead Time
TD_LH DL−off to DH−on (Note 2) 20 ns
TD_HL DH−off to DL−on (Note 2) 20 ns
Negative Current Detection Threshold NCD_TH SWN − PGND, at EN = 5 V −1 mV
SWN source leakage ISWN_SD EN = 0 V, SWN = 0 V 1
mA
Internal Resistor from DH to SWN R_DH_SWN (Note 2) 100
kW
CONTROL SECTION
EN Logic Input Voltage for Disable
VEN_Disable
Set as Disable 0.7 1.0 1.3 V
Hysteresis 150 200 250 mV
EN Logic Input Voltage for MASTER
Mode
VEN_Master Set as Master Mode 1.7 1.95 2.25 V
EN Logic Input Voltage for SLAVE
Mode
VEN_Slave
Set as Slave Mode 2.4 2.65 2.9 V
Hysteresis 100 175 250 mV
EN Source Current IEN_SOURCE VEN = 0 V 0.1
mA
EN Sink Current IEN_SINK VEN = 5 V 0.1
mA
PGOOD Pin ON Resistance PGOOD_R I_PGOOD = 5 mA 100
W
PGOOD Pin OFF Current PGOOD_LK 1
mA
SYNC CONTROL
SYNC pin leakage
ISYNC_LK Set as Slave Mode, SYNC = 5 V 1 uA
SYNC frequency F_SYNC (Note 2) 1.2 MHz
Pulse Width PW_SYNC (Note 2) 416 ns
Clock Level Low V_CLKL (Note 2) 0 V
Clock Level High V_CLKH (Note 2) 5 V
SYNC Driving Capability SYNC_CL Set as Master Mode, load capacitor
between SYNC and GND (Note 2)
20 pF
SYNC Source Current ISYNC SYNC shorts to ground 20 mApp
OUTPUT DISCHARGE MODE
Output Discharge On−Resistance
Rdischarge EN = 0 V 20 35
W
Threshold for Discharge Off Vth_DisOff 0.2 0.3 0.4 V
2. Guaranteed by design, not tested in production.
NCP5212A, NCP5212T
http://onsemi.com
9
ELECTRICAL CHARACTERISTICS (V
IN
= 12 V, V
CC
= V
CCP
= 5 V, T
A
=−40°C to 85°C, unless other noted)
Characteristics UnitMaxTypMinTest ConditionsSymbol
TRE SETTING
TRE Threshold Detection Current
I_TRESET Sourced from DL in the short period
before soft−start. (Rtre = 47 kW is
connected from DL to GND
7.2 8 8.8
mA
Detection Voltage for TRE Threshold
Selection
VDL_TRE_1
(Default)
Internal TRE_TH
is set to 300 mV
Rtre w 75 kW
(Note 2)
500 600 700
mV
VDL_TRE_2 Internal TRE_TH
is set to 500 mV
Rtre = 44 − 50 kW
(Note 2)
300 450
VDL_TRE_3 TRE is Disabled
Rtre v 25 kW
(Note 2)
0 250
TRE Comparator Offset TRE_OS (Note 2) 10 mV
Propagation Delay of TRE
Comparator
TD_PWM (Note 2) 20 ns
THERMAL SHUTDOWN
Thermal Shutdown
Tsd (Note 2) 150 °C
Thermal Shutdown Hysteresis Tsdhys (Note 2) 25 °C
2. Guaranteed by design, not tested in production.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

NCP5212TMNTXG

Mfr. #:
Buy NCP5212TMNTXG
Manufacturer:
ON Semiconductor
Description:
Switching Controllers SYNC STEP DOWN CONTROLLER
Lifecycle:
New from this manufacturer.
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