CY7C1355C
CY7C1357C
Document #: 38-05539 Rev. *E Page 19 of 28
Capacitance
[15]
Parameter Description Test Conditions
100 TQFP
Max.
119 BGA
Max.
165 FBGA
Max. Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
DD
= 3.3V.
V
DDQ
= 2.5V
555pF
C
CLK
Clock Input Capacitance 5 5 5 pF
C
I/O
Input/Output Capacitance 5 7 7 pF
Thermal Resistance
[15]
Parameter Description Test Conditions
100 TQFP
Package
119 BGA
Package
165 FBGA
Package Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard
test methods and procedures
for measuring thermal
impedance, per EIA/JESD51.
29.41 34.1 16.8 °C/W
Θ
JC
Thermal Resistance
(Junction to Case)
6.31 14.0 3.0 °C/W
AC Test Loads and Waveforms
Note:
15.Tested initially and after any design or process change that may affect these parameters
OUTPUT
R = 317
R = 351
5pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
R
L
= 50
Z
0
= 50
V
T
= 1.5V
3.3V
ALL INPUT PULSES
V
DDQ
GND
90%
10%
90%
10%
1 ns
1 ns
(c)
OUTPUT
R = 1667
R = 1538
5pF
INCLUDING
JIG AND
SCOPE
(a) (b)
OUTPUT
R
L
= 50
Z
0
= 50
V
T
= 1.25V
2.5V
ALL INPUT PULSES
V
DDQ
GND
90%
10%
90%
10%
1 ns
1 ns
(c)
3.3V I/O Test Load
2.5V I/O Test Load
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CY7C1355C
CY7C1357C
Document #: 38-05539 Rev. *E Page 20 of 28
Switching Characteristics Over the Operating Range
[16, 17]
Parameter Description
–133 –100
UnitMin. Max. Min. Max.
t
POWER
V
DD
(Typical) to the First Access
[18]
11ms
Clock
t
CYC
Clock Cycle Time 7.5 10 ns
t
CH
Clock HIGH 3.0 4.0 ns
t
CL
Clock LOW 3.0 4.0 ns
Output Times
t
CDV
Data Output Valid after CLK Rise 6.5 7.5 ns
t
DOH
Data Output Hold after CLK Rise 2.0 2.0 ns
t
CLZ
Clock to Low-Z
[19, 20, 21]
00ns
t
CHZ
Clock to High-Z
[19, 20, 21]
3.5 3.5 ns
t
OEV
OE LOW to Output Valid 3.5 3.5 ns
t
OELZ
OE
LOW to Output Low-Z
[19, 20, 21]
00ns
t
OEHZ
OE HIGH to Output High-Z
[19, 20, 21]
3.5 3.5 ns
Set-up Times
t
AS
Address Set-up before CLK Rise 1.5 1.5 ns
t
ALS
ADV/LD Set-up before CLK Rise 1.5 1.5 ns
t
WES
WE, BW
X
Set-up before CLK Rise 1.5 1.5 ns
t
CENS
CEN
Set-up before CLK Rise 1.5 1.5 ns
t
DS
Data Input Set-up before CLK Rise 1.5 1.5 ns
t
CES
Chip Enable Set-Up before CLK Rise 1.5 1.5 ns
Hold Times
t
AH
Address Hold after CLK Rise 0.5 0.5 ns
t
ALH
ADV/LD Hold after CLK Rise 0.5 0.5 ns
t
WEH
WE, BW
X
Hold after CLK Rise 0.5 0.5 ns
t
CENH
CEN Hold after CLK Rise 0.5 0.5 ns
t
DH
Data Input Hold after CLK Rise 0.5 0.5 ns
t
CEH
Chip Enable Hold after CLK Rise 0.5 0.5 ns
Notes:
16.Timing reference level is 1.5V when V
DDQ
= 3.3V and is 1.25V when V
DDQ
= 2.5V.
17.Test conditions shown in (a) of AC Test Loads unless otherwise noted.
18.This part has a voltage regulator internally; t
POWER
is the time that the power needs to be supplied above V
DD
(minimum) initially, before a Read or Write operation
can be initiated.
19. t
CHZ
, t
CLZ
,t
OELZ
, and t
OEHZ
are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
20.At any given voltage and temperature, t
OEHZ
is less than t
OELZ
and t
CHZ
is less than t
CLZ
to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.
21.This parameter is sampled and not 100% tested.
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CY7C1355C
CY7C1357C
Document #: 38-05539 Rev. *E Page 21 of 28
Switching Waveforms
Read/Write Waveforms
[22, 23, 24]
Notes:
22.
For this waveform ZZ is tied LOW.
23.When CE
is LOW, CE
1
is LOW, CE
2
is HIGH and CE
3
is LOW. When CE is HIGH, CE
1
is HIGH or CE
2
is LOW or CE
3
is HIGH.
24.Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved). Burst operations are optional.
WRITE
D(A1)
123456789
CLK
t
CYC
t
CL
t
CH
10
CE
t
CEH
t
CES
WE
CEN
t
CENH
t
CENS
BW
X
ADV/LD
t
AH
t
AS
ADDRESS
A1 A2
A3
A4
A5 A6 A7
t
DH
t
DS
DQ
C
OMMAND
t
CLZ
D(A1) D(A2) Q(A4)Q(A3)
D(A2+1)
t
DOH
t
CHZ
t
CDV
WRITE
D(A2)
BURST
WRITE
D(A2+1)
READ
Q(A3)
READ
Q(A4)
BURST
READ
Q(A4+1)
WRITE
D(A5)
READ
Q(A6)
WRITE
D(A7)
DESELECT
OE
t
OEV
t
OELZ
t
OEHZ
DON’T CARE UNDEFINED
D(A5)
t
DOH
Q(A4+1)
D(A7)Q(A6)
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CY7C1357C-100AXCT

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
IC SRAM 9M PARALLEL 100TQFP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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