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NVD5C486NLT4G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2017
January, 2018 − Rev. 0
1 Publication Order Number:
NVD5C486NL/D
NVD5C486NL
Power MOSFET
40 V, 16 mW, 24 A, Single N−Channel
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Q
G
and Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
40 V
Gate−to−Source Voltage V
GS
"20 V
Continuous Drain Cur-
rent R
JC
(Notes 1 & 3)
Steady
State
T
C
= 25°C
I
D
24
A
T
C
= 100°C 17
Power Dissipation R
JC
(Note 1)
T
C
= 25°C
P
D
18
W
T
C
= 100°C 9.0
Continuous Drain
Current R
JA
(Notes 1, 2 & 3)
Steady
State
T
A
= 25°C
I
D
9.8
A
T
A
= 100°C 7.0
Power Dissipation R
JA
(Notes 1 & 2)
T
A
= 25°C
P
D
2.9
W
T
A
= 100°C 1.4
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 s
I
DM
110 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
175
°C
Source Current (Body Diode) I
S
15 A
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, I
L(pk)
= 1.7 A)
E
AS
63 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) (Note 1)
R
JC
8.2
°C/W
Junction−to−Ambient − Steady State (Note 2)
R
JA
52
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
www.onsemi.com
1
2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
1
Gate
2
Drain
3
Source
4
Drain
AYWW
5C
486NLG
A = Assembly Location
Y = Year
WW = Work Week
5C486NL = Device Code
G = Pb−Free Package
G
S
N−CHANNEL MOSFET
D
40 V
16 m @ 10 V
R
DS(on)
24 A
I
D
V
(BR)DSS
24.5 m @ 4.5 V
NVD5C486NL
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
40 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
17 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25°C 10 A
T
J
= 125°C 250
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= 20 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 20 A
1.2 2.2 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
4.6 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 4.5 V, I
D
= 10 A 19.6 24.5
m
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 10 A 13.3 16
m
Forward Transconductance g
FS
V
DS
= 3 V, I
D
= 10 A 25.5 S
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
530
pF
Output Capacitance C
oss
210
Reverse Transfer Capacitance C
rss
13
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 32 V,
I
D
= 10 A
4.7 nC
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 32 V,
I
D
= 10 A
9.8
nC
Threshold Gate Charge Q
G(TH)
1.2
Gate−to−Source Charge Q
GS
2.0
Gate−to−Drain Charge Q
GD
1.5
Plateau Voltage V
GP
3.2 V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(on)
V
GS
= 10 V, V
DS
= 32 V,
I
D
= 10 A, R
G
= 2.5
6.0
ns
Rise Time t
r
14
Turn−Off Delay Time t
d(off)
15
Fall Time t
f
2.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C 0.88 1.2
V
T
J
= 125°C 0.77
Reverse Recovery Time t
RR
V
GS
= 0 V, dIs/dt = 100 A/s,
I
S
= 10 A
19
ns
Charge Time ta 8.0
Discharge Time tb 10
Reverse Recovery Charge Q
RR
10 nC
4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
NVD5C486NL
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
10
0
5
15
35
21
0
10
30
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
987543 105
30
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0
1.0
1.5
2.0
403025205
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (m)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
V
GS
= 10 V to 4.5 V
V
DS
= 3 V
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
5
I
D
= 10 A
T
J
= 25°C
7
5
20
V
GS
= 10 V
I
D
= 10 A
V
GS
= 10 V
T
J
= 125°C
T
J
= 175°C
15 35
0.001
1K
100K
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (m)
175
32 5
0.5
150
25
25
20
10
T
J
= 85°C
20
15
30
9
100
4.0 V
34
15
10
10
30
3.2 V
2.8 V
10
6
10K
10
5
15
35
T
J
= 25°C
V
GS
= 4.5 V
68
10
1
0.1
T
J
= 150°C
T
J
= 25°C
3.6 V
20
25
0.01
25
P1-P3P4-P6

NVD5C486NLT4G

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Manufacturer:
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Description:
MOSFET T6 40V DPAK EXP
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