2SD2675TL

2SD2675

Transistors

1/2

General purpose amplification (30V, 1A)

2SD2675

zApplication

Low frequency amplifier

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.

V

CE(sat) ≤ 350mV

At I

C = 500mA / IB = 25mA

zExternal dimensions (Units : mm)

ROHM : TSMT3

(1) Base

(2) Emitter

(3) Collector

1.6

2.8

0.4

0.16

0~0.1

0.3

(

3

)

0.85

0.7

0.95

(1)

2.9

1.9

(2)

0.95

Each lead has same dimensions

Abbreviated symbol : EU

~0.6

1.0MAX

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol Unit

∗

1

V

CBO

V

Collector-base voltage

V

CEO

V

Collector-emitter voltage

V

EBO

V

Emitter-base voltage

I

C

A

I

CP

A

Collector current

P

C

mW

Power dissipation

Tj

°C

Junction temperature

Tstg

Limits

30

30

6

1

2

500

150

−55~+150 °C

Range of storage temperature

Single pulse, PW=1ms

∗

2

Each Terminal Mounted on a Recommended

∗

1

∗

2

zPackaging specifications

2SD2675

TL

3000

Type

Package

Code

Basic ordering unit (pieces)

Taping

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

30

−−

V

I

C

=10µA

Collector-base breakdown voltage

BV

CBO

30

−−

V

I

C

=1mA

Collector-emitter breakdown voltage

BV

CEO

6

−−

V

I

E

=10µA

Emitter-base breakdown voltage

BV

EBO

−−

100 nA

V

CB

=30V

Collector cutoff current

I

CBO

Emitter cutoff current

−−

100 nA

V

EB

=6V

I

EBO

−

120 350 mV

I

C

/I

B

=500mA/25mA

Collector-emitter saturation voltage

V

CE(sat)

270

−

680

− V

CE

/I

C

=2V/100mA

DC current gain

h

FE

−

320

−

MHz

V

CE

=2V, I

E

=−100mA, f=100MHz

Transition frequency

f

T

−

7

−

pF

V

CB

=10V, I

E

=0A, f=1MHz

Corrector output capacitance

Cob

∗

∗

∗ Pulsed

2SD2675

Transistors

2/2

zElectrical characteristic curves

0.001 0.01 0.1 1

COLLECTOR CURRENT : I

C

(A)

10

DC CURRENT GAIN : h

FE

100

1000

Ta=25°C

Ta=−40°C

Ta=100°C

VCE=2V

Pulsed

Fig.1 DC current gain

vs. collector current

0.001 0.01 0.1 1

COLLECTOR CURRENT : I

C

(A)

BASE SATURATION VOLTAGE : V

BE (sat)

(V)

COLLECTOR SATURATION VOLTAGE : V

CE (sat)

(V)

0.1

0.01

10

1

Ta=25°C

Ta=25°C

Ta=−40°C

Ta=−40°C

Ta=100°C

Ta=100°C

V

BE(sat)

V

CE(sat)

I

C

/I

B

=20

Pulsed

I

C

/I

B

=20/1

Pulsed

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage

vs. collector current

0.001 0.01 0.1 1

COLLECTOR CURRENT : I

C

(A)

0.001

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

0.01

0.1

10

1

Ta=25°C

V

CE

=2V

IC/IB=50/1

IC/IB=20/1

IC/IB=10/1

Fig.3 Collector-emitter saturation voltage

vs. collector current

0

0.001

0.01

0.1

1

BASE TO EMITTER VOLTAGE : V

BE

(V)

COLLECTOR CURRENT : I

C

(A)

1.51.00.5

V

CE

=2V

Pulsed

Ta=25°C

Ta=−40°C

Ta=100°C

Fig.4 Grounded emitter propagation

characteristics

0.01 0.1 1

EMITTER CURRENT : I

E

(A)

10

TRANSITION FREQUENCY : f

T

(MHz)

100

1000

V

CE

=2V

Ta=25°C

f=100MHz

Fig.5 Gain bandwidth product

vs. emitter current

0.01 0.1 1

COLLECTOR CURRENT : I

C

(A)

Fig.6 Switching time

1

SWITCHING TIME : (ns)

10

100

1000

Ta=25°C

V

CE

=5V

I

C

/I

B

=20/1

tstg

tdon

tr

tf

0.01 0.1 1 10 100

EMITTER TO BASE VOLTAGE : V

EB

(V)

COLLECTOR TO BASE VOLTAGE : V

CB

(V)

1

EMITTER INPUT CAPACITANCE : Cib (pF)

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

10

100

Cib

Cob

I

C

=0A

f=1MHz

Ta=25°C

Fig.7 Collector output capacitance

vs. collector-base voltage

Emitter input capacitance

vs. emitter-base voltage

2SD2675TL

Mfr. #:

Manufacturer:

Description:

Bipolar Transistors - BJT NPN 30V 1A

Lifecycle:

New from this manufacturer.

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2SD2675TL