©2006 Fairchild Semiconductor Corporation
FPAB50PH60
January, 2006
Absolute Maximum Ratings (T
J
= 25°C, Unless Otherwise Specified)
Converter Part
Note
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150 °C(@T
C
≤ 100°C). However, to insure safe operation of the SPM,
the average junction temperature should be limited to T
J(ave)
≤ 125°C (@T
C
≤ 100°C)
Control Part
Total System
Thermal Resistance
Note :
2. For the measurement point of case temperature(T
C
), please refer to Fig. 2.
Item Symbol Condition Rating Unit
Supply Voltage V
i
Applied between R-S 264 V
RMS
Supply Voltage (Surge) V
i(Surge)
Applied between R-S 500 V
Output Voltage V
PN
Applied between P- N 450 V
Output Voltage (Surge) V
PN(Surge)
Applied between P- N 500 V
Collector-emitter Voltage V
CES
600 V
Input Current (100% Load) I
i
T
C
< 95°C, V
i
=220V, V
PN
= 390V,
V
PWM
=20kHz
30 A
Input Current (125% Load) I
i(125%)
T
C
< 95°C, V
i
=220V, V
PN
= 390V,
V
PWM
=20kHz, 1min Non-repetitive
37.5 A
Collector Dissipation P
C
T
C
= 25°C per One IGBT 143 W
Operating Junction Temperature T
J
(Note 1) -20 ~ 125 °C
Item Symbol Condition Rating Unit
Control Supply Voltage V
CC
Applied between V
CC
- COM 20 V
Input Signal Voltage V
IN
Applied between IN - COM -0.3~5.5 V
Fault Output Supply Voltage V
FO
Applied between V
FO
- COM -0.3~V
CC
+0.3 V
Fault Output Current I
FO
Sink Current at V
FO
Pin 5 mA
Current Sensing Input Voltage V
SC
Applied between C
SC
- COM -0.3~V
CC
+0.3 V
Item Symbol Condition Rating Unit
Module Case Operation Temperature T
C
-20 ~ 100 °C
Storage Temperature T
STG
-40 ~ 125 °C
Isolation Voltage V
ISO
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to DBC
2500 V
rms
Item Symbol Condition Min. Typ. Max. Unit
Junction to Case Thermal
Resistance
(Referenced to PKG cen-
ter)
R
θ
(j-c)Q
IGBT - - 0.7 °C/W
R
θ
(j-c)HD
High-side diode - - 1.5 °C/W
R
θ
(j-c)LD
Low-side diode - - 0.85 °C/W
