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HUFA75333S3S

P1-P3P4-P6P7-P9P10-P10
©2001 Fairchild Semiconductor Corporation HUFA75333G3, HUFA75333P3, HUFA75333S3S Rev. B
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. TRANSFER CHARACTERISTICS
Typical Performance Curves
(Continued)
100
1000
10
-4
10
-3
10
-2
10
-1
10
0
10
1
50
10
-5
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I
DM
, PEAK CURRENT (A)
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
100
10 100
1
1
500
20
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
J
= MAX RATED
T
C
= 25
o
C
100µs
10ms
1ms
V
DSS(MAX)
= 55V
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
0.01 0.1 1 1
0
0.001
500
10
I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R ≠ 0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
30
60
90
120
150
1.5 3.0 4.5 6.0 7.
5
0
0
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 6V
PULSE DURATION = 80µs
T
C
= 25
o
C
V
GS
= 5V
V
GS
= 10V
V
GS
= 20V
V
GS
= 7V
DUTY CYCLE = 0.5% MAX
30
60
90
120
150
1.5 3.0 4.5 6.0 7.
5
0
0
V
GS
, GATE TO SOURCE VOLTAGE (V)
175
o
C
-55
o
C
25
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D
, DRAIN CURRENT (A)
HUFA75333G3, HUFA75333P3, HUFA75333S3S
©2001 Fairchild Semiconductor Corporation HUFA75333G3, HUFA75333P3, HUFA75333S3S Rev. B
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
1.0
1.5
2.0
2.5
-40 0 40 80 120 160 20
0
0.5
-80
NORMALIZED DRAIN TO SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESISTANCE
PULSE DURATION = 80µs
V
GS
= 10V, I
D
= 66A
DUTY CYCLE = 0.5% MAX
0.4
0.6
0.8
1.0
1.2
-80 -40 0 40 80 120 160 200
T
J
, JUNCTION TEMPERATURE (
o
C)
THRESHOLD VOLTAGE
NORMALIZED GATE
V
GS
= V
DS
, I
D
= 250µA
0.9
1.0
1.1
1.2
-40 0 40 80 120 160 20
0
0.8
-80
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN TO SOURCE
I
D
= 250µA
BREAKDOWN VOLTAGE
500
1000
1500
2000
10 20 30 40 50 6
0
0
0
C, CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
2
4
6
8
10
10 20 30 4
0
0
0
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 66A
I
D
= 50A
I
D
= 33A
I
D
= 16A
WAVEFORMS IN
DESCENDING ORDER:
V
DD
= 30V
Q
g
, GATE CHARGE (nC)
HUFA75333G3, HUFA75333P3, HUFA75333S3S
©2001 Fairchild Semiconductor Corporation HUFA75333G3, HUFA75333P3, HUFA75333S3S Rev. B
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORM
FIGURE 18. SWITCHING TIME TEST CIRCUIT FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
t
P
V
GS
0.01Ω
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
G(REF)
V
DD
Q
g(TH)
V
GS
= 2V
Q
g(10)
V
GS
= 10V
Q
g(TOT)
V
GS
= 20
V
V
DS
V
GS
I
g(REF)
0
0
Q
gs
Q
gd
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
HUFA75333G3, HUFA75333P3, HUFA75333S3S
P1-P3P4-P6P7-P9P10-P10

HUFA75333S3S

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Buy HUFA75333S3S
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 55V 66A D2PAK
Lifecycle:
New from this manufacturer.
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