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Jantx2N2484

P1-P2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
T4-LDS-0058 Rev. 1 (080853) Page 1 of 2
DEVICES LEVELS
2N2484UA
JAN
2N2484UB
JANTX
2N2484UBC *
JANTXV
JANS
* Available to JANS quality level only.
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage V
CEO
60 Vdc
Collector-Base Voltage V
CBO
60 Vdc
Emitter-Base Voltage V
EBO
6.0 Vdc
Collector Current I
C
50 mAdc
Total Power Dissipation @ T
A
= +25°C
(1)
P
T
360 mW
Operating & Storage Junction Temperature Range T
J
, T
stg
-65 to +200 °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Value Unit
Thermal Resistance, Ambient-to-Case
2N2484
2N2484UA
2N2484UB, UBC
R
θJA
325
275
350
°C/W
1. See 19500/376 for Thermal Performance Curves.
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
V
(BR)CEO
60
Vdc
Collector-Emitter Cutoff Current
V
CE
= 45Vdc
I
CES
5.0
ηAdc
Collector-Base Cutoff Current
V
CB
= 45Vdc
V
CB
= 60Vdc
I
CBO
5.0
10
ηAdc
μAdc
Collector-Emitter Cutoff Current
V
CE
= 5.0Vdc
I
CEO
2.0
ηAdc
TO-18 (TO-206AA)
2N2484
2N2484UA
2N2484UB, UBC
(UBC = Ceramic Lid Version)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
T4-LDS-0058 Rev. 1 (080853) Page 2 of 2
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
V
EB
= 5.0Vdc
V
EB
= 6.0Vdc
I
EBO
2.0
10
ηAdc
μAdc
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 1.0μAdc, V
CE
= 5.0Vdc
I
C
= 10μAdc, V
CE
= 5.0Vdc
I
C
= 100μAdc, V
CE
= 5.0Vdc
I
C
= 500μAdc, V
CE
= 5.0Vdc
I
C
= 1.0mAdc, V
CE
= 5.0Vdc
I
C
= 10mAdc, V
CE
= 5.0Vdc
h
FE
45
200
225
250
250
225
500
675
800
800
800
Collector-Emitter Saturation Voltage
I
C
= 1.0mAdc, I
B
= 100μAdc
V
CE(sat)
0.3 Vdc
Base-Emitter Voltage
V
CE
= 5.0Vdc, I
C
= 100μAdc
V
BE(ON)
0.5 0.7 Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Forward Current Transfer Ratio
I
C
= 50μAdc, V
CE
= 5.0Vdc, f = 5.0MHz
I
C
= 500μAdc, V
CE
= 5.0Vdc, f = 30MHz
|h
fe
|
3.0
2.0
0.7
Open Circuit Output Admittance
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz
h
oe
40
μmhos
Open Circuit Reverse-Voltage Transfer Ratio
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz
h
re
8.0 x 10
-4
Input Impedance
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz
h
je
3.5 24
kΩ
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz
h
fe
250 900
Output Capacitance
V
CB
= 5.0Vdc, I
E
= 0, 100kHz ≤ f ≤ 1.0MHz
C
obo
5.0 pF
Input Capacitance
V
EB
= 0.5Vdc, I
C
= 0, 100kHz ≤ f ≤ 1.0MHz
C
ibo
6.0 pF
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%.
P1-P2

Jantx2N2484

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Buy Jantx2N2484
Manufacturer:
Microchip / Microsemi
Description:
Bipolar Transistors - BJT Small-Signal BJT
Lifecycle:
New from this manufacturer.
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