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T
O
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2
2
0
A
B
PSMN7R8-100PSE
N-channel 100 V 7.8 mΩ standard level MOSFET with
improved SOA in TO220 package
11 August 2014 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of
NXP's "NextPower Live" portfolio, the PSMN7R8-100PSE is robust enough to withstand
substantial in-rush and fault condition currents during turn on/off, whilst offering a low
RDS(on) characteristic to keep temperatures down and efficiency up in continued use.
Ideal for telecommunication systems based on 48 V backplanes / supply rails.
2. Features and benefits
Enhanced safe operating area (SOA) for superior protection during linear mode
operation
Low RDS(on) for low conduction losses
3. Applications
Electronic fuse
Hot-swap / Soft-start
Uninterruptible power supplies
Motor control
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current T
mb
= 100 °C; V
GS
= 10 V; Fig. 2 - - 83 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - - 294 W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 12
- 6.7 7.8
Dynamic characteristics
Q
GD
gate-drain charge - 41 - nC
Q
G(tot)
total gate charge
V
GS
= 10 V; I
D
= 25 A; V
DS
= 50 V;
Fig. 14; Fig. 15
- 128 - nC
NXP Semiconductors
PSMN7R8-100PSE
N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in
TO220 package
PSMN7R8-100PSE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 11 August 2014 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 100 A;
V
sup
≤ 100 V; R
GS
= 50 Ω; unclamped;
Fig. 4
- - 315 mJ
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 D drain
3 S source
mb D mounting base; connected to
drain
1 2
mb
3
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMN7R8-100PSE TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
7. Marking
Table 4. Marking codes
Type number Marking code
PSMN7R8-100PSE PSMN7R8-100PSE
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 100 V

PSMN7R8-100PSEQ

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET N-channel 100V 7.8mO std level MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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