LifecyclePhase:
Revision : 4
Expired Period: Forever
Release Date:2015-10-16 11:09:14.0
Data Sheet
1206 Package Phototransistor With Inner Lens
PT11-21C/L41/TR8
3
Copyright © 2015, Everlight All Rights Reserved. Release Date: 2015/9/26. Issue No: DPT-0000288. Rev:4
www.everlight.com
Absolute Maximum Ratings (Ta=25℃)
Parameter Symbol Rating Units
Collector-Emitter Voltage V
30
V
Emitter-Collector-Voltage V
5
V
Collector Current I
20
mA
Operating Temperature T
-25 ~ +85
℃
Storage Temperature T
-40 ~ +85
℃
Soldering Temperature *1 T
260
℃
Power Dissipation at(or below)
25℃Free Air Temperature
P
d
75
mW
Notes: *1:Soldering time≦5 seconds.
Electro-Optical Characteristics (Ta=25℃)
Parameter Symbol Condition Min Typ Max Unit
Rang Of Spectral Bandwidth λ
0.5
--- 530 --- 1030 nm
Wavelength Of Peak Sensitivity λ
P
--- --- 940 --- nm
Collector-Emitter Breakdown
Voltage
BV
CEO
I
C
=100μA
Ee=0mW/cm
2
30 --- --- V
Emitter-Collector Breakdown
Voltage
BV
ECO
I
E
=100μA
Ee=0mW/cm
2
5 --- --- V
Collector-Emitter Saturation
Voltage
V
CE(sat)
I
C
=2mA
Ee=1m W/cm
2
--- --- 0.4 V
Collector Dark Current I
CEO
V
CE
=20V
Ee=0mW/cm
2
--- --- 100 nA
On State Collector Current I
C(ON)
V
CE
=5V
Ee=1mW /cm
2
0.3 0.8 --- mA
