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NSR30CM3T5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2016
December, 2016 − Rev. 5
Publication Order Number:
NSR30CM3T5G/D
1
NSR30CM3
Dual Common Cathode
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand−held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ I
F
= 10 mA
• NSVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• This is a Pb−Free Device
MAXIMUM RATINGS (T
J
= 125°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage V
R
30 Volts
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
F
190
1.9
mW
mW/°C
Forward Current (DC) I
F
200 Max mA
Junction Temperature T
J
125 Max °C
Storage Temperature Range T
stg
−55 to +150 °C
Thermal Resistance
Junction−to−Ambient (Note 1)
R
JA
525 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 board with minimum mounting pad.
30 VOLTS
DUAL COMMON CATHODE
SCHOTTKY BARRIER DIODES
Device Package Shipping
†
ORDERING INFORMATION
NSR30CM3T5G SOT−723
(Pb−Free)
8000/Tape & Ree
l
SOT−723
CASE 631AA
STYLE 3
MARKING DIAGRAM
3
CATHODE
1
ANODE
2
ANODE
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
5C = Specific Device Code
D = Date Code
5C D
1
3
2
1
www.onsemi.com
NSVR30CM3T5G SOT−723
(Pb−Free)
8000/Tape & Ree
l
NSR30CM3
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
R
= 10 A)
V
(BR)R
30 − − V
Total Capacitance
(V
R
= 1.0 V, f = 1.0 MHz)
C
T
− 7.6 10 pF
Reverse Leakage
(V
R
= 25 V)
I
R
− 0.5 2.0
A
Forward Voltage
(I
F
= 0.1 mA)
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 30 mA)
(I
F
= 100 mA)
V
F
−
−
−
−
−
0.22
0.29
0.35
0.41
0.52
0.24
0.32
0.40
0.50
0.80
V
Reverse Recovery Time
(I
F
= I
R
= 10 mA, I
R(REC)
= 1.0 mA, Figure 1)
t
rr
− − 5.0 ns
Forward Current (DC) I
F
− − 200 mA
Repetitive Peak Forward Current I
FRM
− − 300 mA
Non−Repetitive Peak Forward Current (t < 1.0 s) I
FSM
− − 600 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NSR30CM3
www.onsemi.com
3
C
T
, TOTAL CAPACITANCE (pF)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2 k
820
0.1 F
DUT
V
R
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
T
10%
90%
I
F
I
R
t
rr
T
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measure
d
at i
R(REC)
= 1 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
100
0.0 0.1
V
F
, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4
0.5
10
1.0
0.1
85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
510
15
20
25
0
V
R
, REVERSE VOLTAGE (VOLTS)
51015 30
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Total Capacitance
−40°C
25°C
T
A
= 150°C
0.6
−55°C
150°C
125°C
100
1000
3
0
2520
I
R
, REVERSE CURRENT (A)
I
F
, FORWARD CURRENT (mA)
14
12
10
8
6
4
2
0
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
P1-P3P4-P4

NSR30CM3T5G

Mfr. #:
Buy NSR30CM3T5G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 30V 240mW Dual
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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