IRF9335TRPBF

IRF9335PbF
4 www.irf.com
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 10. Threshold Voltage vs. Temperature
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
°
C
/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
-V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
-
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
0 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA LIMITED BY R
DS
(on)
T
A
= 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
DC
25 50 75 100 125 150
T
A
, Ambient Temperature (°C)
0
0.6
1.2
1.8
2.4
3
3.6
4.2
4.8
5.4
6
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
-
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= -10uA
IRF9335PbF
www.irf.com 5
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Typical On-Resistance vs. Drain Current
Fig 15. Typical Power vs. Time
* Reverse Polarity of D.U.T for P-Channel
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
Inductor Current
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
di/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
-
+
+
+
-
-
-
R
G
V
DD
D.U.T *
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET
®
Power MOSFETs
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
450
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP -1.5A
-2.3A
BOTTOM -4.3A
1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
Time (sec)
0
200
400
600
800
1000
P
o
w
e
r
(
W
)
2 4 6 8 10 12 14 16 18 20
-V
GS,
Gate -to -Source Voltage (V)
20
40
60
80
100
120
140
160
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
)
I
D
= -5.4A
T
J
= 25°C
T
J
= 125°C
0 5 10 15 20 25 30
-I
D
, Drain Current (A)
0
100
200
300
400
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
)
Vgs = -10V
Vgs = -4.5V
IRF9335PbF
6 www.irf.com
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
Fig 19b. Switching Time Waveforms
Fig 19a. Switching Time Test Circuit
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
1K
VCC
DUT
0
L
S
20K
S
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
-V
GS
V
DS
-V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
t
p
V
(
BR
)
DSS
I
AS
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f

IRF9335TRPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET 1 P-CH -30V HEXFET 59mOhms 4.7nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet