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GSID100A120S5C1

P1-P3P4-P6P7-P9
Preliminary Data Sheet
GSID100A120S5C1
Page 1 of 9 Rev. 0.2 12/28/2015
GSID100A120S5C1
6-Pack IGBT Module
Features：
Short Circuit Rated 10μs
Low Saturation Voltage: V
CE (sat)
= 1.90V @ I
C
= 100A , T
C
=25℃
Low Switching Loss
100% RBSOA Tested（2×Ic）
Low Stray Inductance
Lead Free, Compliant with RoHS Requirement
Applications：
High Power Converters
Motor Drivers
UPS Systems
IGBT, Inverter
Maximum Rated Values (T
C
=25℃ unless otherwise specified)
V
CES
Collector-Emitter Blocking Voltage 1200 V
V
GES
Gate-Emitter Voltage ±20 V
I
C
Continuous Collector Current
T
C
= 80℃ 100 A
T
C
= 25℃ 170 A
I
CM(1)
Peak Collector Current Repetitive T
J
= 175℃ 200 A
t
SC
Short Circuit Withstand Time >10 μs
P
D
Maximum Power Dissipation per IGBT
T
C
= 25℃
T
Jmax
=175℃
650 W
Preliminary Data Sheet
GSID100A120S5C1
Page 2 of 9 Rev. 0.2 12/28/2015
Electrical Characteristics of IGBT (T
C
=25℃ unless otherwise specified)
Static characteristics
Symbol
Description
Conditions Min Typ Max Unit
V
GE(th)
Gate-Emitter Threshold Voltage
I
C
= 1 mA, V
CE
= V
GE
5.0 5.5 6.0 V
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
=100A,
V
GE
= 15V
T
J
= 25℃ 1.9 2.10 V
T
J
= 125℃ 2.30 V
T
J
= 150℃ 2.30 V
I
CES
Collector-Emitter Leakage Current
V
GE
= 0V,
V
CE
= V
CES
, T
J
= 25℃
1 mA
I
GES
Gate-Emitter Leakage Current
V
GE
= ±20V,
V
CE
= 0V, T
J
= 25℃
200
nA
C
ies
Input Capacitance
V
CE
= 25V, V
GE
= 0V ,
f ＝1MHz
13.7 nF
C
oes
Output capacitance 0.78 nF
Switching Characteristics
t
d(on)
Turn-on Delay Time
V
CC
= 600V,I
C
= 100A,
R
G
= 5Ω,V
GE
= ±15V,
Inductive Load
T
J
= 25℃ 242
ns T
J
= 125℃ 249
T
J
= 150℃ 247
t
r
Rise Time
T
J
= 25℃ 77
ns
T
J
= 125℃ 82
T
J
= 150℃ 84
t
d(off)
Turn-off Delay Time
T
J
= 25℃ 249
ns
T
J
= 125℃ 268
T
J
= 125℃ 271
t
f
Fall Time
T
J
= 25℃ 163
ns
T
J
= 125℃ 246
T
J
= 150℃ 343
E
on
Turn-on Switching Loss
T
J
= 25℃ 4.8
mJ T
J
= 125℃ 6.9
T
J
= 150℃ 7.6
Preliminary Data Sheet
GSID100A120S5C1
Page 3 of 9 Rev. 0.2 12/28/2015
E
off
Turn-off Switching Loss
T
J
= 25℃ 4.9
mJ
T
J
= 125℃ 7.6
T
J
= 150℃ 8.5
Q
g
Total Gate Charge
T
J
= 25℃ 898
nC
T
J
= 125℃ 924
T
J
= 150℃ 934
RBSOA
Reverse Bias Safe Operation
Area
I
C
=600A,V
CC
=1050V,Vp=1200V,
Rg = 15Ω, V
GE
=+15V to 0V, T
J
=150°C
Trapezoid
SCSOA
Short Circuit Safe Operation
Area
V
CC
< 720V, V
GE
= 15V,
T
J
= 150℃
10 μs
R
θJC
IGBT Thermal Resistance: Junction-To-Case 0.188 ℃/W
Diode, Inverter
Maximum Rated Values (T
C
=25℃ unless otherwise specified)
V
RRM
Repetitive Peak Reverse Voltage 1200 V
I
F
Diode Continuous Forward Current 100 A
I
FM
Repetitive Peak Forward Current 200 A
Electrical Characteristics of FWD (T
C
=25℃ unless otherwise specified)
Symbol Description Conditions Min Typ Max Unit
V
FM
Forward Voltage
I
F
= 100A ,
V
GE
= 0V
T
J
= 25℃ 1.70
V
T
J
= 125℃ 1.70
T
J
= 150℃ 1.65
t
rr
Reverse Recovery Time
I
F
＝100A,
di/dt =1400A/μs,
V
rr
= 600V,
V
GE
= -15V
259
ns 372
419
I
rr
Peak Reverse Recovery Current
T
J
= 25℃ 60
A
T
J
= 125℃ 76.3
T
J
= 150℃ 81.3
P1-P3P4-P6P7-P9

GSID100A120S5C1

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Description:
IGBT MODULE 1200V 170A
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