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ZTX718
P1-P3
P4-P4
PNP SILICON PLANA
R MEDIUM POWER
HIGH GAIN TRANSIST
OR
ISSUE 4–
MAY
1998
FEATURES
*
6A Peak puls
e current
*
Excellen
t h
FE
ch
aracte
risti
cs u
p to
6A
(puls
ed)
*
low satur
ation voltage
*I
C
Cont 2.5A
APPLICATIONS
*
Power M
OSFET gat
e driver
in conjunc
tion with
complementar
y ZTX618
ABSOLUTE MAXI
MUM RATI
NGS.
PARAMETER
SYMBOL
V
AL
UE
U
N
I
T
Collector-Ba
se Volta
ge
V
CBO
-20
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-6
A
Continuous Co
llector Current
I
C
-2.5
A
Base Current
I
B
-500
mA
Practical Power
Dissipation
*
P
totp
1.5
W
Powe
r Diss
ipat
ion at
T
amb
=25°C
P
tot
1W
Operating a
nd Storage
Temperature Ra
nge
T
j
:T
stg
-55 to +200
°C
*
Device moun
ted on P.C.B.
with copper equal to 1 sq.
Inch minimum
.
ZTX718
C
B
E
E-Line
TO92 Compatible
ELECTRIAL
CHARAC
TERISTIC
S (at
T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDIT
IONS.
Collector-Base
Breakdown Vo
ltage
V
(BR)CBO
-20
-6
5
V
I
C
=-100
µ
A
Collector-Emitter
Breakdown Vo
ltage
V
(BR)CEO
-20
-5
5
V
I
C
=-10mA*
Emitter-Base
Breakdown Vo
ltage
V
(BR)EBO
-5
-8
.8
V
I
E
=-100
µ
A
Collector Cut-Off
Current
I
CBO
-100
nA
V
CB
=-15V
Emitter Cut-Off
Current
I
EBO
-100
nA
V
EB
=-4V
Collector Em
itter
Cut-Off Current
I
CES
-100
nA
V
CES
=-15V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-16
-130
-145
-190
-40
-200
-220
-260
mV
mV
mV
mV
I
C
=-0.1A
, I
B
=-10mA*
I
C
=-1A, I
B
=-20mA
*
I
C
=-1.5A
, I
B
=-50mA*
I
C
=-2.5A
, I
B
=-200m
A*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.98
-1.1
V
I
C
=-2.5A
, I
B
=-200m
A*
Base-Emitter Turn-On
Voltage
V
BE(on)
-0.8
5
-0.
95
V
I
C
=-2.5A
, V
CE
=-2V
*
Static For
ward
Current Tran
sfer
Ratio
h
FE
300
300
150
35
15
475
450
230
70
30
I
C
=-10mA, V
CE
=-2V*
I
C
=-100m
A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-4A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
Transition
Frequency
f
T
150
180
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacita
nce
C
obo
21
30
pF
V
CB
=-10V, f=
1MHz
Turn-On T
ime
t
(on)
40
ns
V
CC
=-10V,
I
C
=-1A
I
B1
=I
B2
=20mA
Turn-Off Time
t
(off)
670
ns
*Measure
d under pulsed conditions. Pulse width=300
µ
s. Duty c
ycle
≤
2%
ZTX71
8
ZTX718
0.2
0
0.3
1.0
0.8
0.4
0.6
0.2
0
1.4
1
10
0.01
0.1
100V
10V
1V
0.1V
0
0.2
450
225
0.4
0.1
1mA
100mA
10mA
1A
10A
10A
1A
100mA
10mA
1mA
10A
1A
10mA
100mA
1mA
1mA
100mA
10mA
1A
10A
1mA
100mA
10mA
1A
10A
0.4
0.8
0.6
0
1.0
100u
s
10m
s
1s
DC
100ms
1ms
-55°C
100
°C
25°
C
I
C
/I
B
=10
I
C
/I
B
=10
I
C
/I
B
=30
I
C
/I
B
=50
25°C
25°C
100°C
-55°C
25°
C
100
°C
-55°C
I
C
/I
B
=10
V
CE
=2V
25°C
100°C
-55°C
V
CE
=2V
0.6
0.5
0.5
0.6
0.1
0.4
0.3
0
0.2
1.2
1.2
I
C
-Collector Curr
ent
I
C
-Collector Current
I
C
-Collector Curre
nt
I
C
-Collector Current
I
C
-Collector Current
h
FE
v I
C
V
BE(
sa
t)
v I
c
V
BE(on)
v I
C
V
CE(sat)
v I
C
V
CE(sat)
v I
C
V
CE(s
at)
- (V)
V
CE(s
at)
- (V)
V
BE(sat)
- (V
)
H
fe
- T
ypical
Gain
V
BE(on)
-(
V)
I
C
- Collector Cur
rent (A)
V
CE
- Collector
V
oltage
Safe Operating Area
TYPICAL CHARACTERISTICS
Singl
e Pul
se
T
e
st T
amb=2
5C
P1-P3
P4-P4
ZTX718
Mfr. #:
Buy ZTX718
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP High Gain
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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