ZTX718STZ

PNP SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 4– MAY 1998

FEATURES

* 6A Peak pulse current

* Excellent h

FE

characteristics up to 6A (pulsed)

* low saturation voltage

*I

C

Cont 2.5A

APPLICATIONS

* Power MOSFET gate driver in conjunction with

complementary ZTX618

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

-20 V

Collector-Emitter Voltage V

CEO

-20 V

Emitter-Base Voltage V

EBO

-5 V

Peak Pulse Current I

CM

-6 A

Continuous Collector Current I

C

-2.5 A

Base Current I

B

-500 mA

Practical Power Dissipation* P

totp

1.5 W

Power Dissipation at T

amb

=25°C P

tot

1W

Operating and Storage Temperature Range T

j

:T

stg

-55 to +200 °C

* Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

ZTX718

C

B

E

E-Line

TO92 Compatible

ELECTRIAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V

(BR)CBO

-20 -65 V

I

C

=-100µA

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

-20 -55 V I

C

=-10mA*

Emitter-Base

Breakdown Voltage

V

(BR)EBO

-5 -8.8 V

I

E

=-100µA

Collector Cut-Off

Current

I

CBO

-100 nA V

CB

=-15V

Emitter Cut-Off

Current

I

EBO

-100 nA V

EB

=-4V

Collector Emitter

Cut-Off Current

I

CES

-100 nA V

CES

=-15V

Collector-Emitter

Saturation Voltage

V

CE(sat)

-16

-130

-145

-190

-40

-200

-220

-260

mV

mV

mV

mV

I

C

=-0.1A, I

B

=-10mA*

I

C

=-1A, I

B

=-20mA*

I

C

=-1.5A, I

B

=-50mA*

I

C

=-2.5A, I

B

=-200mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

-0.98 -1.1 V I

C

=-2.5A, I

B

=-200mA*

Base-Emitter Turn-On

Voltage

V

BE(on)

-0.85 -0.95 V I

C

=-2.5A, V

CE

=-2V*

Static Forward

Current Transfer

Ratio

h

FE

300

300

150

35

15

475

450

230

70

30

I

C

=-10mA, V

CE

=-2V*

I

C

=-100mA, V

CE

=-2V*

I

C

=-2A, V

CE

=-2V*

I

C

=-4A, V

CE

=-2V*

I

C

=-6A, V

CE

=-2V*

Transition

Frequency

f

T

150 180 MHz I

C

=-50mA, V

CE

=-10V

f=100MHz

Output Capacitance C

obo

21 30 pF V

CB

=-10V, f=1MHz

Turn-On Time t

(on)

40 ns V

CC

=-10V, I

C

=-1A

I

B1

=I

B2

=20mA

Turn-Off Time t

(off)

670 ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

ZTX718

ZTX718

0.2

0

0.3

1.0

0.8

0.4

0.6

0.2

0

1.4

1

10

0.01

0.1

100V10V1V0.1V

0

0.2

450

225

0.4

0.1

1mA

100mA10mA 1A

10A 10A

1A100mA10mA

1mA

10A1A10mA 100mA1mA 1mA 100mA10mA 1A 10A

1mA

100mA10mA 1A 10A

0.4

0.8

0.6

0

1.0

100us

10ms

1s

DC

100ms

1ms

-55°C

100°C

25°C

I

C

/I

B

=10

I

C

/I

B

=10

I

C

/I

B

=30

I

C

/I

B

=50

25°C

25°C

100°C

-55°C

25°C

100°C

-55°C

I

C

/I

B

=10

V

CE

=2V

25°C

100°C

-55°C

V

CE

=2V

0.6

0.5 0.5

0.6

0.1

0.4

0.3

0

0.2

1.2

1.2

IC-Collector Current

I

C-Collector Current IC-Collector Current

I

C-Collector Current

I

C-Collector Current

hFE v IC

VBE(sat) v Ic

V

BE(on) v IC

V

CE(sat)

v I

C

V

CE(sat)

v I

C

V

CE(sat)

- (V)

V

CE(sat) - (V)

V

BE(sat) - (V)

H

fe - Typical Gain

V

BE(on) -(V)

I

C - Collector Current (A)

VCE - Collector Voltage

Safe Operating Area

TYPICAL CHARACTERISTICS

Single Pulse Test Tamb=25C

ZTX718STZ

Mfr. #:

Manufacturer:

Diodes Incorporated

Description:

Bipolar Transistors - BJT PNP High Gain

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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