ZX5T953GTA Datasheet ZX5T953GTA | P4-P6

ZX5T953G

Datasheet Number: DS33425 Rev. 5 - 2

4 of 7

www.diodes.com

March 2015

ZX5T953G

A Product Line of

Diodes Incorporated

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BV

CBO

-140 -160 - V

I

C

= -100µA

Collector-Emitter Breakdown Voltage

BV

CE

R

-140 -160 - V

I

C

= -1µA, RB ≤ 1kΩ

Collector-Emitter Breakdown Voltage (Note 10)

BV

CEO

-100 -115 - V

I

C

= -1mA

Emitter-Base Breakdown Voltage

BV

EBO

-7 -8.1 - V

I

E

= -100µA

Collector-Base Cut-Off Current

I

CBO

-

<1

-

-20

-0.5

nA

µA

V

CB

= -100V

V

CB

= -100V, T

A

= +100°C

Collector-Emitter Cut-Off Current

I

CER

R ≤ 1kΩ

-

<1

-

-20

-0.5

nA

µA

V

CB

= -100V

V

CB

= -100V, T

A

= +100°C

Emitter Cut-Off Current

I

EBO

- <1 -10 nA

V

EB

= -6V

Static Forward Current Transfer Ratio (Note 10)

h

FE

100 250 -

-

I

C

= -10mA, V

CE

= -1V

100 200 300

I

C

= -1A, V

CE

= -1V

25 50 -

I

C

= -3A, V

CE

= -1V

15 30 -

I

C

= -4A, V

CE

= -1V

- 5 -

I

C

= -10A, V

CE

= -1V

Collector-Emitter Saturation Voltage (Note 10)

V

CE(sat)

- -20 -30

mV

I

C

= -100mA, I

B

= -10mA

- -70 -90

I

C

= -1A, I

B

= -100mA

- -120 -150

I

C

= -2A, I

B

= -200mA

- -240 -340

I

C

= -4A, I

B

= -400mA

Base-Emitter Saturation Voltage (Note 10)

V

BE(sat)

- -985 -1100 mV

I

C

= -4A, I

B

= -400mV

Base-Emitter Turn-On Voltage (Note 10)

V

BE(on)

- -920 -1050 mV

I

C

= -4A, V

CE

= -2V

Output Capacitance (Note 10)

C

obo

- 42 - pF

V

CB

= -10V. f = 1MHz

Transition Frequency

f

T

- 125 - MHz

V

CE

= -10V, I

C

= -100mA

f = 50MHz

Switching Time

t

on

- 42 -

ns

V

CC

= -10V, I

C

= -1A

I

B1

= I

B2

= -100mA

t

off

- 540 -

Note: 10. Measured under pulsed conditions. Pulse width

≤

300µs. Duty cycle

≤

2%.

ZX5T953G

Datasheet Number: DS33425 Rev. 5 - 2

5 of 7

www.diodes.com

March 2015

ZX5T953G

A Product Line of

Diodes Incorporated

Typical Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

1m 10m 100m 1 10

10m

100m

1

1m 10m 100m 1 10

0.0

0.1

0.2

0.3

0.4

0.5

0.6

1m 10m 100m 1 10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1m 10m 100m 1 10

0.4

0.6

0.8

1.0

1.2

1m 10m 100m 1 10

0.4

0.6

0.8

1.0

1.2

1.4

0

50

100

150

200

250

V

CE(SAT)

v I

C

Tamb=25°C

I

C

/I

B

=50

I

C

/I

B

=20

I

C

/I

B

=10

- V

CE(SAT)

(V)

- I

C

Collector Current (A)

V

BE(SAT)

v I

C

I

C

/I

B

=10

100°C

25°C

-55°C

- V

CE(SAT)

(V)

- I

C

Collector Current (A)

h

FE

v I

C

V

CE

=2V

-55°C

25°C

100°C

Normalised Gain

- I

C

Collector Current (A)

25°C

V

CE(SAT)

v I

C

I

C

/I

B

=10

100°C

-55°C

- V

BE(SAT)

(V)

- I

C

Collector Current (A)

V

BE(ON)

v I

C

V

CE

=2V

100°C

25°C

-55°C

- V

BE(ON)

(V)

- I

C

Collector Current (A)

Typical Gain (h

FE

)

ZX5T953G

Datasheet Number: DS33425 Rev. 5 - 2

6 of 7

www.diodes.com

March 2015

ZX5T953G

A Product Line of

Diodes Incorporated

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between

device terminals and PCB tracking.

SOT223

Dim

Min

Max

Typ

A

1.55 1.65 1.60

A1

0.010

0.15 0.05

b

0.60 0.80 0.70

b1

2.90 3.10 3.00

C

0.20 0.30 0.25

D

6.45 6.55 6.50

E

3.45 3.55 3.50

E1

6.90 7.10 7.00

e

- - 4.60

e1

- - 2.30

L

0.85 1.05 0.95

Q

0.84 0.94 0.89

All Dimensions in mm

Dimensions

Value (in mm)

C

2.30

C1

6.40

X

1.20

X1

3.30

Y

1.60

Y1

1.60

Y2

8.00

ZX5T953GTA

ZX5T953GTA

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