Document Number: 002-10549 Rev. *B Page 10 of 18
Data Retention and Endurance
Parameter Description Test condition Min Max Unit
T
DR
Data retention T
A
= 125 C 11000 – Hours
T
A
= 105 C11–Years
T
A
= 85 C 121 – Years
NV
C
Endurance Over Operating Temperature 10
13
– Cycles
Example of an F-RAM Life Time in an AEC-Q100 Automotive Application
An application does not operate under a steady temperature for the entire usage life time of the application. Instead, it is often expected
to operate in multiple temperature environments throughout the application’s usage life time. Accordingly, the retention specification
for F-RAM in applications often needs to be calculated cumulatively. An example calculation for a multi-temperature thermal profiles
is given below.
Temperature
T
Time Factor
t
Acceleration Factor with respect to Tmax
A
[5]
Profile Factor
P
Profile Life Time
L (P)
T1 = 125 C t1 = 0.1 A1 = 1
8.33 > 10.46 Years
T2 = 105 C t2 = 0.15 A2 = 8.67
T3 = 85 C t3 = 0.25 A3 = 95.68
T4 = 55 C t4 = 0.50 A4 = 6074.80
A
LT
LTmax
------------------------
e
Ea
k
-------
1
T
---
1
Tmax
----------------
–
==
P
1
t1
A1
-------
t2
A2
-------
t3
A3
-------
t4
A4
-------
+++
--------------------------------------------------------
=
Capacitance
Parameter
[6]
Description Test Conditions Max Unit
C
O
Output pin capacitance (SDA) T
A
= 25 C, f = 1 MHz, V
DD
= V
DD
(typ) 8 pF
C
I
Input pin capacitance 6pF
Thermal Resistance
Parameter
[6]
Description Test Conditions 8-pin SOIC Unit
JA
Thermal resistance
(junction to ambient)
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA/JESD51.
147 C/W
JC
Thermal resistance
(junction to case)
47 C/W
Notes
5. Where k is the Boltzmann constant 8.617 ×
10
-5
eV/K, Tmax is the highest temperature specified for the product, and T is any temperature within the F-RAM product
specification. All temperatures are in Kelvin in the equation.
6. This parameter is periodically sampled and not 100% tested.