MAX3202EEBS-T

Detailed Description
The MAX3202E/MAX3203E/MAX3204E/MAX3206E are
diode arrays designed to protect sensitive electronics
against damage resulting from ESD conditions or tran-
sient voltages. The low input capacitance makes these
devices ideal for high-speed data lines. The
MAX3202E, MAX3203E, MAX3204E, and MAX3206E
protect two, three, four, and six channels, respectively.
The MAX3202E/MAX3203E/MAX3204E/MAX3206E are
designed to work in conjunction with a device’s intrinsic
ESD protection. The MAX3202E/MAX3203E/MAX3204E/
MAX3206E limit the excursion of the ESD event to
below ±25V peak voltage when subjected to the
Human Body Model waveform. When subjected to the
IEC 61000-4-2 waveform, the peak voltage is limited to
±60V when subjected to Contact Discharge and ±100V
when subjected to Air-Gap Discharge. The device that
is being protected by the MAX3202E/MAX3203E/
MAX3204E/MAX3206E must be able to withstand these
peak voltages plus any additional voltage generated by
the parasitic board.
Applications Information
Design Considerations
Maximum protection against ESD damage results from
proper board layout (see the
Layout Recommendations
section and Figure 2). A good layout reduces the para-
sitic series inductance on the ground line, supply line,
and protected signal lines.
The MAX3202E/MAX3203E/MAX3204E/MAX3206E ESD
diodes clamp the voltage on the protected lines during
an ESD event and shunt the current to GND or V
CC
. In
an ideal circuit, the clamping voltage, V
C
, is defined as
the forward voltage drop, V
F
, of the protection diode
plus any supply voltage present on the cathode.
For positive ESD pulses:
V
C
= V
CC
+ V
F
For negative ESD pulses:
V
C
= -V
F
In reality, the effect of the parasitic series inductance
on the lines must also be considered (Figure 1).
For positive ESD pulses:
For negative ESD pulses:
where I
ESD
is the ESD current pulse.
VV Lx
dI
dt
Lx
d
C
FD
ESD
() (
=− +
+
()
2
13
II
dt
ESD
)
VV V Lx
dI
dt
L
CCC
FD
ESD
()
=+ +
+
()
1
12
()
x
dI
dt
ESD
MAX3202E/MAX3203E/MAX3204E/MAX3206E
Low-Capacitance, 2/3/4/6-Channel, ±15kV ESD
Protection Arrays for High-Speed Data Interfaces
4 _______________________________________________________________________________________
L1
PROTECTED
LINE
L3
D2
GROUND RAIL
POSITIVE SUPPLY RAIL
I/O_
D1
L2
Figure 1. Parasitic Series Inductance
V
CC
PROTECTED LINE
NEGATIVE ESD
CURRENT
PULSE
PATH TO
GROUND
PROTECTED
CIRCUIT
GND
D1
I/O_
V
C
D2
L1
L3
L2
Figure 2. Layout Considerations
MAX3202E/MAX3203E/MAX3204E/MAX3206E
Low-Capacitance, 2/3/4/6-Channel, ±15kV ESD
Protection Arrays for High-Speed Data Interfaces
_______________________________________________________________________________________ 5
During an ESD event, the current pulse rises from zero
to peak value in nanoseconds (Figure 3). For example,
in a 15kV IEC-61000 Air-Gap Discharge ESD event,
the pulse current rises to approximately 45A in 1ns
(di/dt = 45 x 10
9
). An inductance of only 10nH adds an
additional 450V to the clamp voltage. An inductance of
10nH represents approximately 0.5in of board trace.
Regardless of the device’s specified diode clamp volt-
age, a poor layout with parasitic inductance significantly
increases the effective clamp voltage at the protected
signal line.
A low-ESR 0.1µF capacitor must be used between V
CC
and GND. This bypass capacitor absorbs the charge
transferred by an +8kV IEC-61000 Contact Discharge
ESD event.
Ideally, the supply rail (V
CC
) would absorb the charge
caused by a positive ESD strike without changing its
regulated value. In reality, all power supplies have an
effective output impedance on their positive rails. If a
power supply’s effective output impedance is 1, then
by using V = I × R, the clamping voltage of V
C
increas-
es by the equation V
C
= I
ESD
x R
OUT
. An +8kV IEC
61000-4-2 ESD event generates a current spike of 24A,
so the clamping voltage increases by V
C
= 24A × 1,
or V
C
= 24V. Again, a poor layout without proper
bypassing increases the clamping voltage. A ceramic
chip capacitor mounted as close to the MAX3202E/
MAX3203E/MAX3204E/MAX3206E V
CC
pin is the best
choice for this application. A bypass capacitor should
also be placed as close to the protected device as
possible.
±15kV ESD Protection
ESD protection can be tested in various ways; the
MAX3202E/MAX3203E/MAX3204E/MAX3206E are
characterized for protection to the following limits:
±15kV using the Human Body Model
±8kV using the Contact Discharge method speci-
fied in IEC 61000-4-2
±15kV using the IEC 61000-4-2 Air-Gap Discharge
method
ESD Test Conditions
ESD performance depends on a number of conditions.
Contact Maxim for a reliability report that documents
test setup, methodology, and results.
Human Body Model
Figure 4 shows the Human Body Model, and Figure 5
shows the current waveform it generates when dis-
charged into a low impedance. This model consists of
a 100pF capacitor charged to the ESD voltage of inter-
est, which is then discharged into the device through a
1.5k resistor.
CHARGE-CURRENT-
LIMIT RESISTOR
DISCHARGE
RESISTANCE
STORAGE
CAPACITOR
C
s
100pF
R
C
1M
R
D
1.5k
HIGH-
VOLTAGE
DC
SOURCE
DEVICE
UNDER
TEST
Figure 4. Human Body ESD Test Model
I
P
100%
90%
36.8%
t
RL
TIME
t
DL
CURRENT WAVEFORM
PEAK-TO-PEAK RINGING
(NOT DRAWN TO SCALE)
I
r
10%
0
0
AMPERES
Figure 5. Human Body Model Current Waveform
t
R
= 0.7ns to 1ns
30ns
60ns
t
100%
90%
10%
I
PEAK
I
Figure 3. IEC 61000-4-2 ESD Generator Current Waveform
MAX3202E/MAX3203E/MAX3204E/MAX3206E
IEC 61000-4-2
The IEC 61000-4-2 standard covers ESD testing and
performance of finished equipment. The MAX3202E/
MAX3203E/MAX3204E/MAX3206E help users design
equipment that meets Level 4 of IEC 61000-4-2.
The main difference between tests done using the
Human Body Model and IEC 61000-4-2 is higher peak
current in IEC 61000-4-2. Because series resistance is
lower in the IEC 61000-4-2 ESD test model (Figure 6)
the ESD-withstand voltage measured to this standard is
generally lower than that measured using the Human
Body Model. Figure 3 shows the current waveform for
the ±8kV IEC 61000-4-2 Level 4 ESD Contact
Discharge test.
The Air-Gap Discharge test involves approaching the
device with a charged probe. The Contact Discharge
method connects the probe to the device before the
probe is energized.
Layout Recommendations
Proper circuit-board layout is critical to suppress ESD-
induced line transients. The MAX3202E/MAX3203E/
MAX3204E/MAX3206E clamp to 100V; however, with
improper layout, the voltage spike at the device is
much higher. A lead inductance of 10nH with a 45A
current spike at a dv/dt of 1ns results in an ADDITION-
AL 450V spike on the protected line. It is essential that
the layout of the PC board follows these guidelines:
1) Minimize trace length between the connector or
input terminal, I/O_, and the protected signal line.
2) Use separate planes for power and ground to reduce
parasitic inductance and to reduce the impedance to
the power rails for shunted ESD current.
3) Ensure short ESD transient return paths to GND
and V
CC
.
4) Minimize conductive power and ground loops.
5) Do not place critical signals near the edge of the
PC board.
6) Bypass V
CC
to GND with a low-ESR ceramic capac-
itor as close to V
CC
as possible.
7) Bypass the supply of the protected device to GND
with a low-ESR ceramic capacitor as close to the
supply pin as possible.
Low-Capacitance, 2/3/4/6-Channel, ±15kV ESD
Protection Arrays for High-Speed Data Interfaces
6 _______________________________________________________________________________________
CHARGE-CURRENT-
LIMIT RESISTOR
DISCHARGE
RESISTANCE
STORAGE
CAPACITOR
C
s
150pF
R
C
50 to 100
R
D
330
HIGH-
VOLTAGE
DC
SOURCE
DEVICE
UNDER
TEST
Figure 6. IEC 61000-4-2 ESD Test Model

MAX3202EEBS-T

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
TVS DIODE 4UCSP
Lifecycle:
New from this manufacturer.
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