NVMFS5C410NLT3G

NVMFS5C410NL
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
V
DS
, DRAINTOSOURCE VOLTAGE (V) Q
G
, TOTAL GATE CHARGE (nC)
403020100
0
1k
3k
4k
2k
10k
1008040200
0
2
4
6
8
10
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCETODRAIN VOLTAGE (V)
100101
1
10
100
10,00
0.90.8 1.00.70.60.50.40.3
1
21
41
Figure 11. Safe Operating Area Figure 12. I
PEAK
vs. Time in Avalanche
V
DS
(V) TIME IN AVALANCHE (s)
1001010.1
1
10
100
1000
1
10
C, CAPACITANCE (pF)
V
GS
, GATETOSOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
DS
(A)
I
PEAK
(A)
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
C
ISS
C
OSS
C
RSS
V
DS
, DRAINTOSOURCE VOLTAGE (V)
0
10
15
20
25
30
5
V
DS
= 20 V
T
J
= 25°C
I
D
= 50 A
Q
T
Q
GS
Q
GD
V
GS
= 4.5 V
V
DD
= 20 V
I
D
= 50 A
t
d(off)
t
d(on)
t
f
t
r
T
J
= 150°C
T
J
= 25°C
T
J
= 55°C
11
31
T
J(initial)
= 100°C
T
J(initial)
= 25°C
1E04 1E02
R
DS(on)
Limit
Thermal Limit
Package Limit
dc
0.01 ms
0.1 ms
1 ms
10 ms
T
C
= 25°C
V
GS
10 V
5k
6k
7k
8k
11k
1E03
1000
3525155
9k
60 120
T
J
= 125°C
6
16
26
36
46
100
140
NVMFS5C410NL
www.onsemi.com
5
Figure 13. Thermal Characteristics
PULSE TIME (sec)
0.010.001 10.0001 0.10.00001 100.000001
0.01
0.1
1
10
100
R
q
JA
(t) (°C/W)
100 1000
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
NVMFS5C410NL 650 mm
2
, 2 oz., Cu Single Layer Pad
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NVMFS5C410NLT1G 5C410L DFN5
(PbFree)
1500 / Tape & Reel
NVMFS5C410NLWFT1G 410LWF DFN5
(PbFree, Wettable Flanks)
1500 / Tape & Reel
NVMFS5C410NLT3G 5C410L DFN5
(PbFree)
5000 / Tape & Reel
NVMFS5C410NLWFT3G 410LWF DFN5
(PbFree, Wettable Flanks)
5000 / Tape & Reel
NVMFS5C410NLAFT1G 5C410L DFN5
(PbFree)
1500 / Tape & Reel
NVMFS5C410NLWFAFT1G 410LWF DFN5
(PbFree, Wettable Flanks)
1500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NVMFS5C410NL
www.onsemi.com
6
PACKAGE DIMENSIONS
M 3.00 3.40
q 0 −−−
_
3.80
12
_
DFN5 5x6, 1.27P
(SO8FL)
CASE 488AA
ISSUE M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
q
D
E
2
2
B
A
0.20
C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A 0.90 1.00
A1 0.00 −−−
b 0.33 0.41
c 0.23 0.28
D 5.15
D1 4.70 4.90
D2 3.80 4.00
E 6.15
E1 5.70 5.90
E2 3.45 3.65
e 1.27 BSC
G 0.51 0.575
K 1.20 1.35
L 0.51 0.575
L1 0.125 REF
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 c
L
DETAIL A
A1
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
4.530
1.530
4.5600.495
3.200
1.330
0.965
2X
2X
4X
4X
PIN 5
(EXPOSED PAD)
5.00 5.30
6.00 6.30
PITCH
DIMENSIONS: MILLIMETERS
1
RECOMMENDED
e
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
NVMFS5C410NL/D
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Sales Representative

NVMFS5C410NLT3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SO8FL 40V 315A 900MO
Lifecycle:
New from this manufacturer.
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