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TSHA6500

P1-P3P4-P5
TSHA6500
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 24-Aug-11
1
Document Number: 81022
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Infrared Emitting Diode, 875 nm, GaAlAs
DESCRIPTION
The TSHA6500 is an infrared, 875 nm emitting diode in
GaAlAs technology, molded in a clear, untinted plastic
package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength:
p
= 875 nm
• High reliability
• Angle of half intensity: = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 200/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared remote control and free air data transmission
systems with comfortable radiation angle
• This emitter is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8389
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) (deg)
P
(nm) tr (ns)
TSHA6500 30 ± 24 875 600
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSHA6500 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
= 100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
2.5 A
Power dissipation P
V
180 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature t 5 s, 2 mm from case T
sd
260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R
thJA
230 K/W
TSHA6500
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 24-Aug-11
2
Document Number: 81022
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 1 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
200
0 102030405060708090100
21142
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21143
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.5 1.8 V
I
F
= 1 A, t
p
= 100 μs V
F
2.8 3.5 V
Temperature coefficient of V
F
I
F
= 100 mA TK
VF
- 1.6 mV/K
Reverse current V
R
= 5 V I
R
100 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
20 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
16 30 48 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
128 240 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms e24mW
Temperature coefficient of
e
I
F
= 20 mA TK
e
- 0.7 %/K
Angle of half intensity ± 24 deg
Peak wavelength I
F
= 100 mA
p
875 nm
Spectral bandwidth I
F
= 100 mA  80 nm
Temperature coefficient of
p
I
F
= 100 mA TK
p
0.2 nm/K
Rise time
I
F
= 100 mA t
r
600 ns
I
F
= 1 A t
r
300 ns
Fall time
I
F
= 100 mA t
f
600 ns
I
F
= 1 A t
f
300 ns
Virtual source diameter d2.2mm
TSHA6500
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 24-Aug-11
3
Document Number: 81022
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Pulse Forward Current vs. Pulse Duration
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
t
p
- Pulse Duration (ms)
94 8003
10
0
10
1
10
1
10
-1
10
-1
10
0
10
2
10
-2
t
p
/T=0.01
I
FSM
= 2.5 A (single pause)
0.05
0.1
0.2
0.5
I- Forward Current (A)
F
V
F
- Forward Voltage (V)
94 8005
10
1
10
2
10
3
10
4
t
p
= 100 µs
t
p
/T= 0.001
43210
I- Forward Current (mA)
F
0.7
0.8
0.9
1.0
1.1
1.2
V
F rel
- Relative Forward Voltage (V)
94 7990
T
amb
- Ambient Temperature (°C)
100806040200
I
F
= 10 mA
I
F
- Forward Current (mA)
948746-1
10
3
10
1
10
2
10
4
10
0
1
10
100
1000
I
e
- Radiant Intensity (mW/sr)
TSHA 6500
- Radiant Power (mW)
e
I
F
- Forward Current (mA)
94 8015 e
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Φ
- 10 10 500 100
0
0.4
0.8
1.2
1.6
I ;
e rel e rel
140
94 8020
I
F
= 20 mA
Φ
T
amb
- Ambient Temperature (°C)
P1-P3P4-P5

TSHA6500

Mfr. #:
Buy TSHA6500
Manufacturer:
Vishay Semiconductors
Description:
Infrared Emitters 5V 22mW 875nm 24 Deg
Lifecycle:
New from this manufacturer.
Delivery:
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