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QH12BZ600

P1-P3P4-P6P7-P9
QH12TZ600, QH12BZ600
Qspeed
™
Family
600 V, 12 A H-Series PFC Diode
www.power.com November 2015
Product Summary
I
F(AVG)
12
A
V
RRM
600 V
Q
RR
(Typ at 125 °C) 30 nC
I
RRM
(Typ at 125 °C) 2.2 A
Softness t
B
/t
A
(Typ at 125 °C) 0.65
TO-220AC TO-263AB
QH12TZ600 QH12BZ600
RoHS Compliant
Package uses Lead-free plating and
Green mold compound.
Halogen free per IEC 61249-2-21.
General Description
This device has the lowest Q
RR
of any 600 V
silicon diode. Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
• Power Factor Correction (PFC) boost diode
•
Motor drive circuits
•
DC-AC inverters
Features
• Low Q
RR
, low I
RRM
, low t
RR
• High dI
F
/dt capable (1000 A / µs)
• Soft recovery
Benefits
• Increases efficiency
• Eliminates need for snubber circuits
• Reduces EMI filter component size & count
• Enables extremely fast switching
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Symbol Parameter Conditions Rating Units
V
RRM
Peak repetitive reverse voltage T
J
= 25 °C 600 V
I
F(AVG)
Average forward current T
J
= 150 °C, T
C
= 90 °C 12 A
I
FSM
Non-repetitive peak surge current
60 Hz, ½ cycle, T
C
= 25 °C
100
A
I
FSM
Non-repetitive peak surge current
½ cycle of t = 28 µs Sinusoid, T
C
= 25 °C
350 A
T
J
Operating junction temperature range -55 to 150 °C
T
STG
Storage temperature -55 to 150 °C
Lead soldering temperature Leads at 1.6 mm from case, 10 sec 300 °C
V
ISOL
Isolation voltage (leads-to-tab)
AC, TO-220
2500
V
V
ISOL
Isolation voltage (leads-to-tab) AC, TO-263 1500 V
P
D
Power dissipation T
C
= 25 °C 61 W
Pin Assignment
K
K
A
K
K
K
K
A
A KA K
NC
NC
C
NC
C
Rev 1.4 11/15
QH12TZ600, QH12BZ600
2
Thermal Resistance
Symbol Resistance from: Conditions Rating Units
R
θJA
Junction to ambient TO-220 (only) 62 °C/W
R
θJC
Junction to case
2.05
°C/W
Electrical Specifications at T
J
= 25
°
C (unless otherwise specified)
Symbol Parameter Conditions Min Typ Max Units
DC Characteristics
I
R
Reverse current
V
R
= 600 V, T
J
= 25 °C - - 250 µA
V
R
= 600 V, T
J
= 125 °C - 0.6 - mA
V
F
Forward voltage
I
F
= 12 A, T
J
= 25 °C
-
2.65
3.1
V
I
F
= 12 A, T
J
= 150 °C - 2.33 - V
C
J
Junction capacitance V
R
= 10 V, 1 MHz - 34 - pF
Dynamic Characteristics
t
RR
Reverse recovery time
dI/dt = 200 A/µs
V
R
= 400 V, I
F
= 12 A
T
J
= 25 °C - 11.6 - ns
T
J
= 125 °C
-
20.5
-
ns
Q
RR
Reverse recovery charge
dI/dt = 200 A/µs
V
R
= 400 V, I
F
= 12 A
T
J
= 25 °C - 9.2 14 nC
T
J
= 125 °C - 30 - nC
I
RRM
Maximum reverse
recovery current
dI/dt =200 A/µs
V
R
= 400 V, I
F
= 12 A
T
J
= 25 °C - 1.27 1.8 A
T
J
= 125 °C - 2.2 - A
S
Softness factor =
A
B
t
t
dI/dt = 200 A/µs
V
R
= 400 V, I
F
= 12 A
T
J
= 25 °C - 0.6 -
T
J
= 125 °C - 0.65 -
Note to component engineers: H-Series diodes employ Schottky technologies in their design and construction.
Therefore, Component Engineers should plan their test setups to be similar to those for traditional Schottky test
setups. (For additional details, see Application Note AN-300.)
Figure 1. Reverse Recovery Definitions.
Figure 2. Reverse Recovery Test Circuit.
I
F
dI
F
/dt
I
RRM
t
RR
t
b
t
a
0
0.1xI
RRM
Rev 1.4 11/15
QH12TZ600, QH12BZ600
3
Electrical Specifications at T
J
= 25
°
C (unless otherwise specified)
0
2
4
6
8
10
12
14
16
18
20
22
24
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
F
(V)
I
F
(A)
Tj=125C
Tj=25C
Figure 3. Typical I
F
vs. V
F.
0
10
20
30
40
50
60
70
80
90
100
0 20 40 60 80 100 120 140 160 180
V
R
(V)
C
j
(pF)
Figure 4. Typical C
J
vs. V
R.
0
10
20
30
40
50
60
70
80
90
0 5 10 15 20 25
I
F
(A)
Q
RR
(nC)
dI
F
/dt=200A/us
dI
F
/dt=500A/us
dI
F
/dt=1000A/us
Figure 5. Typical Q
RR
vs. I
F
at T
J
= 125 °C.
0
5
10
15
20
25
30
0 5 10 15 20 25
I
F
(A)
t
RR
(ns)
dI
F
/dt=200A/us
dI
F
/dt=500A/us
dI
F
/dt=1000A/us
Figure 6. Typical t
RR
vs. I
F
at T
J
= 125 °C.
0
5
10
15
20
25
25 50 75 100 125 150
Case Temperature, T
C
(
o
C)
I
F(AV)
(A)
Figure 7. DC Current Derating Curve.
0
10
20
30
40
50
60
70
25 50 75 100 125 150
Case Temperature, T
C
(
o
C)
P (W)
Figure 8. Power Derating Curve.
P1-P3P4-P6P7-P9

QH12BZ600

Mfr. #:
Buy QH12BZ600
Manufacturer:
Power Integrations
Description:
Diodes - General Purpose, Power, Switching Super-Low Qrr. 600V, 12A, Rectifier
Lifecycle:
New from this manufacturer.
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