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MBRF20100CT-M3/4W

P1-P3P4-P4
MBRF2090CT, MBRF20100CT
www.vishay.com
Vishay General Semiconductor
Revision: 17-Aug-15
1
Document Number: 89319
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
•
Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 10 A
V
RRM
90 V, 100 V
I
FSM
150 A
V
F
at I
F
= 10 A 0.65 V
T
J
max. 150 °C
Package ITO-220AB
Diode variation Dual common cathode
TMBS
®
ITO-220AB
1
2
3
PIN 1
PIN 2
PIN 3
MBRF2090CT
MBRF20100CT
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBRF2090CT MBRF20100CT UNIT
Maximum repetitive peak reverse voltage V
RRM
90 100 V
Working peak reverse voltage V
RWM
90 100 V
Maximum DC blocking voltage V
DC
90 100 V
Maximum average forward rectified current
at T
C
= 133 °C
total device
I
F(AV)
20
A
per diode 10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
150 A
Voltage rating of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-65 to +150 °C
Isolation voltage from terminal to heatsink t = 1 min V
AC
1500 V
MBRF2090CT, MBRF20100CT
www.vishay.com
Vishay General Semiconductor
Revision: 17-Aug-15
2
Document Number: 89319
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
RATINGS AND CHARACTERISTICS CURVES (T
C
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetititve Peak Forward Surge
Current Per Diode
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward voltage per diode
I
F
= 10 A
T
C
= 25 °C
V
F
(1)
0.80
V
T
C
= 125 °C
0.65
I
F
= 20 A 0.75
Maximum reverse current per diode
at working peak reverse voltage
T
J
= 25 °C
I
R
(2)
100 μA
T
J
= 100 °C 6.0 mA
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBRF UNIT
Typical thermal resistance per diode R
JC
3.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
ITO-220AB MBRF20100CT-M3/4W 1.75 4W 50/tube Tube
0
4
8
12
20
0
50
100
150
16
Case Temperature (°C)
Average Forward Current (A)
Resistive or Inductive Load
40
60
100
80
140
120
160
1 10010
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
MBRF2090CT, MBRF20100CT
www.vishay.com
Vishay General Semiconductor
Revision: 17-Aug-15
3
Document Number: 89319
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitanc Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0 0.20.1 0.5 1.00.40.3
1
100
10
0.01
0.1
0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
2010 10040 60 80
1
10
0.01
0.1
100
0.001
30 50 70 90
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1 10 100
1000
10 000
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1 MHz
V
sig
= 50 mVp-p
0.1
101
100
1
10
0.001
0.1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
0.01
ITO-220AB
0.076 (1.93) REF.
45° REF.
PIN
321
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.600 (15.24)
0.580 (14.73)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.671 (17.04)
0.651 (16.54)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.110 (2.79)
0.100 (2.54)
7° REF.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.110 (2.79)
0.100 (2.54)
0.190 (4.83)
0.170 (4.32)
7° REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.350 (8.89)
0.330 (8.38)
P1-P3P4-P4

MBRF20100CT-M3/4W

Mfr. #:
Buy MBRF20100CT-M3/4W
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 20A,100V,TRENCH SKY RECT.
Lifecycle:
New from this manufacturer.
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