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NTR4503NT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2003
October, 2016 − Rev. 8
1 Publication Order Number:
NTR4503N/D
NTR4503N, NVTR4503N
Power MOSFET
30 V, 2.5 A, Single N−Channel, SOT−23
Features
• Leading Planar Technology for Low Gate Charge / Fast Switching
• 4.5 V Rated for Low Voltage Gate Drive
• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC−DC Conversion
• Load/Power Switch for Portables
• Load/Power Switch for Computing
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
2.0
A
T
A
= 85°C 1.5
t ≤ 10 s T
A
= 25°C 2.5
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
0.73 W
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
1.5
A
T
A
= 85°C 1.1
Power Dissipation
(Note 2)
T
A
= 25°C P
D
0.42 W
Pulsed Drain Current
t
p
=10 ms
I
DM
10 A
Operating Junction and Storage Temperature T
J
,
T
stg
−55 to
150
°C
Source Current (Body Diode) I
S
2.0 A
Peak Source Current
(Diode Forward)
t
p
=10 ms
I
SM
4.0 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
R
q
JA
170
°C/W
Junction−to−Ambient − t < 10 s (Note 1)
R
q
JA
100
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
300
1. Surface−mounted on FR4 board using 1 in sq pad size.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
G
D
S
Device Package Shipping
†
ORDERING INFORMATION
30 V
105 mW @ 4.5 V
85 mW @ 10 V
R
DS(on)
TYP
2.5 A
I
D
MAXV
(BR)DSS
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
2
3
1
3
Drain
1
Gate
2
Source
N−Channel
NTR4503NT1G SOT−23
(Pb−Free)
3000 / Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NVTR4503NT1G SOT−23
(Pb−Free)
3000 / Tape & Ree
l
TR3 MG
G
TR3 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
www.onsemi.com
NTR4503N, NVTR4503N
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 36 V
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 24 V 1.0 mA
V
GS
= 0 V, V
DS
= 24 V, T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "20 V "100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 1.75 3.0 V
Drain−to−Source On−Resistance R
DS(on)
V
GS
= 10 V, I
D
= 2.5 A 85 110 mW
V
GS
= 4.5 V, I
D
= 2.0 A 105 140
Forward Transconductance g
FS
V
DS
= 4.5 V, I
D
= 2.5 A 5.3 S
CHARGES AND CAPACITANCES
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 15 V
135
pF
Output Capacitance C
oss
52
Reverse Transfer Capacitance C
rss
15
Input Capacitance C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 24 V
130 250
pF
Output Capacitance C
oss
42 75
Reverse Transfer Capacitance C
rss
13 25
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 2.5 A
3.6 7.0
nC
Threshold Gate Charge Q
G(TH)
0.3
Gate−to−Source Charge Q
GS
0.6
Gate−to−Drain Charge Q
GD
0.7
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 24 V,
I
D
= 2.5 A
1.9
nC
Threshold Gate Charge Q
G(TH)
0.3
Gate−to−Source Charge Q
GS
0.6
Gate−to−Drain Charge Q
GD
0.9
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(on)
V
GS
= 10 V, V
DD
= 15 V,
I
D
= 1 A, R
G
= 6 W
5.8 12
ns
Rise Time t
r
5.8 10
Turn−Off Delay Time t
d(off)
14 25
Fall Time t
f
1.6 5.0
Turn−On Delay Time t
d(on)
V
GS
= 10 V, V
DD
= 24 V,
I
D
= 2.5 A, R
G
= 2.5 W
4.8
ns
Rise Time t
r
6.7
Turn−Off Delay Time t
d(off)
13.6
Fall Time t
f
1.8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 2.0 A 0.85 1.2 V
Reverse Recovery Time t
RR
V
GS
= 0 V, I
S
= 2.0 A,
dI
S
/dt = 100 A/ms
9.2 ns
Reverse Recovery Charge Q
RR
4.0 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTR4503N, NVTR4503N
www.onsemi.com
3
TYPICAL PERFORMANCE CURVES
4 V
100°C
0
10
6
432
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
4
2
0
1
Figure 1. On−Region Characteristics
45
4
8
3
0
6
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
57
0.2
0.1
0
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
I
D,
DRAIN CURRENT (AMPS)
2
6
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
−50 0−25 25
1.4
1.2
1.0
0.8
0.6
50 125100
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
0.3
46
T
J
= −55°C
I
D
= 2.5 A
T
J
= 25°C
0.12
0.07
75 150
T
J
= 25°C
I
D
= 2.5 A
V
GS
= 10 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
1.8
V
GS
= 4.5 V
310
53
0
25
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
15
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 100°C
3.4 V
2.6 V
2.8 V
V
GS
= 10 V
10
V
DS
≥ 10 V
35
0.09
10
2
2
0.25
89
0.10
0.08
0.11
4
1.6
100
1
20
T
J
= 150°C
8
3 V
3.2 V
3.6 V
3.8 V
0.15
0.05
1000
10 V
6 V
5 V
4.5 V
4.2 V
P1-P3P4-P5

NTR4503NT1G

Mfr. #:
Buy NTR4503NT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 30V 2.5A N-Channel
Lifecycle:
New from this manufacturer.
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