–3–
REV. F
AMP03
WAFER TEST LIMITS
(@ V
S
= ⴞ15 V, T
A
= 25ⴗC, unless otherwise noted.)*
AMP03GBC
Parameter Symbol Conditions Limit Unit
Offset Voltage V
OS
V
S
= ± 18 V 0.5 mV max
Gain Error No Load, V
IN
= ± 10 V, R
S
= 0 Ω 0.008 % max
Input Voltage Range IVR ± 10 V min
Common-Mode Rejection CMR V
CM
= ± 10 V 80 dB min
Power Supply Rejection Ratio PSRR V
S
= ± 6 V to ± 18 V 8 µV/V max
Output Swing V
O
R
L
= 2 kΩ±12 V max
Short-Circuit Current Limit I
SC
Output Shorted to Ground +45/–15 mA min
Supply Current I
SY
No Load 3.5 mA max
*Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V
Input Voltage
2
. . . . . . . . . . . . . . . . . . . . . . . . . Supply Voltage
Output Short-Circuit Duration . . . . . . . . . . . . . . Continuous
Storage Temperature Range
P, J Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . 300°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Operating Temperature Range
AMP03B . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C
AMP03F, AMP03G . . . . . . . . . . . . . . . . . . –40°C to +85°C
Package Type
JA
3
JC
Unit
Header (J) 150 18 °C/W
8-Lead PDIP (P) 103 43 °C/W
8-Lead SOIC (S) 155 40 °C/W
NOTES
1
Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2
For supply voltages less than ± 18 V, the absolute maximum input voltage is equal
to the supply voltage.
3
θ
JA
is specified for worst-case mounting conditions, i.e., θ
JA
is specified for device
in socket for header and PDIP packages and for device soldered to printed circuit
board for SOIC package.
ORDERING GUIDE
Temperature Package Package
Model
1
Range Description Option
2
AMP03GP –40°C to +85°C8-Lead PDIP P-8
AMP03BJ –40°C to +85°CHeader H-08B
AMP03FJ –40°C to +85°CHeader H-08B
AMP03BJ/883C –55°C to +125°CHeader H-08B
AMP03GS –40°C to +85°C8-Lead SOIC S-8
AMP03GS-REEL –40°C to +85°C8-Lead SOIC S-8
5962-9563901MGA –55°C to +125°CHeader H-08B
AMP03GBC Die
NOTES
1
Burn-in is available on commercial and industrial temperature range parts in
PDIP and header packages.
2
Consult factory for /883 data sheet.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AMP03 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
DICE CHARACTERISTICS
1. REFERENCE
2. –IN
3. +IN
4. –V
EE
5. SENSE
6. OUTPUT
7. +V
CC
8. NC
DIE SIZE 0.076 inch ⴛ 0.076 inch, 5,776 sq. mm
(1.93 mm ⴛ 1.93 mm, 3.73 sq. mm)
BURN-IN CIRCUIT
AMP03
+18V
–18V
25k⍀25k⍀
25k⍀
SLEW RATE TEST CIRCUIT
AMP03
+15V
–15V
0.1F
0.1F
V
IN
= ⴞ10V
V
OUT
= ⴞ10V
WARNING!
ESD SENSITIVE DEVICE
