Parameter Symbol Minimum Typical
(2)
Maximum Units Test Conditions
SI/O Hysteresis
(3)(4)(5)
V
HYS
0.128 1.17 V
Output Low Level V
OL
0 0.4 V I
OL
= 4 mA
Bus Capacitance C
BUS
1000 pF
Note: 
1. Parameters are applicable over the operating range in AT21CS01/11 DC and AC Operating Range,
unless otherwise noted.
2. Typical values characterized at T
A
= +25°C unless otherwise noted.
3. This parameter is characterized but is not 100% tested in production.
4. V
IH
, V
IL
, and V
HYS
are a function of the internal supply voltage, which is a function of V
PUP
, R
PUP
,
C
BUS
, and timing used. Use of a lower V
PUP
, higher R
PUP
, higher C
BUS
, and shorter t
RCV
creates
lower V
IH
, V
IL
and V
HYS
values.
5. Once V
IH
is crossed on a rising edge of SI/O, the voltage on SI/O must drop at least by V
HYS
to be
detected as a logic ‘0’.
1.4 AT21CS11 DC Characteristics
(1)
Parameter Symbol Minimum Typical
(2)
Maximum Units Test Conditions
Pull-up Voltage V
PUP
2.7 4.5 V High-Speed
mode
Pull-up Resistance R
PUP
0.2 1.8 kΩ V
PUP
= 2.7V
0.4 5.4 kΩ V
PUP
= 4.5V
Active Current, Read I
A1
0.08 0.3 mA V
PUP
= 4.5V;
SI/O = V
PUP
Active Current, Write I
A2
0.20 0.5 mA V
PUP
= 4.5V
Standby Current I
SB
0.6 1.5 µA V
PUP
= 2.7V
(3)
;
SI/O = V
PUP
0.7 3.0 µA V
PUP
= 4.5V;
SI/O = V
PUP
Input Low Level
(3)(4)
V
IL
–0.6 0.5 V
Input High Level
(3)(4)
V
IH
V
PUP
x 0.7 V
PUP
+ 0.5 V
SI/O Hysteresis
(3)(4)(5)
V
HYS
0.128 1.4 V
Output Low Level V
OL
0 0.4 V I
OL
= 4 mA
Bus Capacitance C
BUS
1000 pF
Note: 
1. Parameters are applicable over the operating range in AT21CS01/11 DC and AC Operating Range,
unless otherwise noted.
2. Typical values characterized at T
A
= +25°C unless otherwise noted.
3. This parameter is characterized but is not 100% tested in production.
AT21CS01/AT21CS11
© 2017 Microchip Technology Inc.
Datasheet
DS20005857A-page 7
4. V
IH
, V
IL
, and V
HYS
are a function of the internal supply voltage, which is a function of V
PUP
, R
PUP
,
C
BUS
, and timing used. Use of a lower V
PUP
, higher R
PUP
, higher C
BUS
, and shorter t
RCV
creates
lower V
IH
, V
IL
and V
HYS
values.
5. Once V
IH
is crossed on a rising edge of SI/O, the voltage on SI/O must drop at least by V
HYS
to be
detected as a logic ‘0’.
1.5 AT21CS01/11 AC Characteristics
1.5.1 Reset and Discovery Response Timing
Parameter and Condition
(1)(2)
Symbol Standard
Speed
(3)(4)
High Speed Units
Min. Max. Min. Max.
Reset Low Time, Device in Inactive
State
t
RESET
480 48 µs
Discharge Low Time, Device in Active
Write Cycle (t
WR
)
t
DSCHG
150 150 µs
Reset Recovery Time t
RRT
N/A N/A 8 µs
Discovery Response Request t
DRR
N/A N/A 1 2 - t
PUP
(5)
µs
Discovery Response Acknowledge
Time
t
DACK
N/A N/A 8 24 µs
Master Strobe Discovery Response
Time
t
MSDR
N/A N/A 2 6 µs
SI/O High Time for Start/Stop
Condition
t
HTSS
N/A N/A 150 µs
Note: 
1. Parameters applicable over operating range in AT21CS01/11 DC and AC Operating Range, unless
otherwise noted.
2. AC measurement conditions for the table above:
Loading capacitance on SI/O: 100 pF
R
PUP
(bus line pull-up resistor to V
PUP
): 1 kΩ; V
PUP
: 2.7V
3. Due to the fact that the device will default to High-Speed mode upon Reset, the Reset and
Discovery Response Timing after t
RESET
does not apply for Standard Speed mode. High-Speed
mode timing applies in all cases after t
RESET
.
4. Standard Speed is not available on the AT21CS11.
5. t
PUP
is the time required once the SI/O line is released to be pulled up from V
IL
to V
IH
. This value is
application specific and is a function of the loading capacitance on the SI/O line as well as the R
PUP
chosen. Limits for these values are provided in AT21CS01 DC Characteristics(1) and AT21CS11
DC Characteristics(1).
AT21CS01/AT21CS11
© 2017 Microchip Technology Inc.
Datasheet
DS20005857A-page 8
1.5.2 Data Communication Timing
Parameter and Condition
(1)(2)
Symbol Frame Type Standard
Speed
(3)
High Speed Units
Min. Max. Min. Max.
Bit Frame Duration t
BIT
Input and
Output Bit
Frame
40 100 t
LOW0
+
t
PUP
(4)
+
t
RCV
25 µs
SI/O High Time for Start/Stop
Condition
t
HTSS
Input Bit
Frame
600 150 µs
SI/O Low Time, Logic ‘0
Condition
t
LOW0
Input Bit
Frame
24 64 6 16 µs
SI/O Low Time, Logic ‘1
Condition
t
LOW1
Input Bit
Frame
4 8 1 2 µs
Master SI/O Low Time During
Read
t
RD
Output Bit
Frame
4 8 -
t
PUP
(4)
1 2 -
t
PUP
(4)
µs
Master Read Strobe Time t
MRS
Output Bit
Frame
t
RD
+
t
PUP
(4)
8 t
RD
+
t
PUP
(4)
2 µs
Data Output Hold Time (Logic
0’)
t
HLD0
Output Bit
Frame
8 24 2 6 µs
Slave Recovery Time t
RCV
Input and
Output Bit
Frame
8 2
(5)
µs
Noise Filtering Capability on
SI/O
t
NOISE
Input Bit
Frame
0.5 µs
Note: 
1. Parameters applicable over operating range in AT21CS01/11 DC and AC Operating Range, unless
otherwise noted.
2. AC measurement conditions for the table above:
Loading capacitance on SI/O: 100 pF
R
PUP
(bus line pull-up resistor to V
PUP
): 1 kΩ; V
PUP
: 2.7V
3. Standard Speed is not available on the AT21CS11.
4. t
PUP
is the time required once the SI/O line is released to be pulled up from V
IL
to V
IH
. This value is
application specific and is a function of the loading capacitance on the SI/O line as well as the R
PUP
chosen. Limits for these values are provided in AT21CS01 DC Characteristics(1).
5. The system designer must select an combination of R
PUP
, C
BUS
, and t
BIT
such that the minimum
t
RCV
is satisfied. The relationship of t
RCV
within the bit frame can be expressed by the following
formula: t
BIT
= t
LOW0
+ t
PUP
+ t
RCV
.
AT21CS01/AT21CS11
© 2017 Microchip Technology Inc.
Datasheet
DS20005857A-page 9

AT21CS01-SSHM17-T

Mfr. #:
Manufacturer:
Microchip Technology / Atmel
Description:
EEPROM SEEPROM, 1K, SW - 1.7-3.6V, 125Kbps, Ind Tmp, 8-SOIC
Lifecycle:
New from this manufacturer.
Delivery:
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