TSM-107-02-L-DV-A

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c
2009 ROHM Co., Ltd. All rights reserved.
2009.02 - Rev.A
4V Drive Pch MOSFET
TT8J2
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.
2) High Power Package.
3) Low voltage drive. (4V)
zApplications
Switching
zPackaging specifications zInner circuit
Package
Code
Taping
Basic ordering unit (pieces)
TT8J2
TR
3000
Type
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>
1
2
1
Parameter
VV
DSS
Symbol
VV
GSS
AI
D
AI
DP
AI
S
AI
SP
W / TOTAL
P
D
°CTch
°CTstg
Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of Storage temperature
Continuous
Pulsed
Continuous
Pulsed
1 Pw10µs, Duty cycle1%
2 When mounted on a ceramic board
Source current
(Body diode)
30
±20
±2.5
±10
0.8
10
1.25
W / ELEMENT
1.0
150
55 to +150
Limits
zThermal resistance
Parameter
°C / W / TOTAL
Rth(ch-a)
Symbol Limits Unit
C
hannel to ambient
Mounted on a ceramic board
100
°C / W / ELEMENT
125
Each lead has same dimensions
(8) (7) (5)(6)
(1) (2) (4)(3)
Abbreviated symbol : J02
TSST8
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
1 ESD PROTECTION DIODE
2 BODY DIODE
2
1
(8) (7)
(1) (2)
2
1
(6) (5)
(3) (4)
TT8J2
Data Sheet
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.02 - Rev.A
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter Symbol
I
GSS
Y
fs
Min. Typ. Max.
Unit
Conditions
V
(BR) DSS
I
DSS
V
GS (th)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
R
DS (on)
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
−−±10 µAV
GS
20V, V
DS
=0V
V
DD
15V
R
L
6 / R
G
=10
30 −−VI
D
= 1mA, V
GS
=0V
−−1 µAV
DS
= 30V, V
GS
=0V
1.0 −−2.5 V V
DS
= 10V, I
D
= 1mA
60 84 I
D
= 2.5A, V
GS
= 10V
95 130 m
m
I
D
= 1.2A, V
GS
= 4.5V
m 115 160 I
D
= 1.2A, V
GS
= 4V
1.8 −−SV
DS
= 10V, I
D
= 2.5A
460 pF V
DS
= 10V
65
40
pF V
GS
=0V
7
pF f=1MHz
20
ns
35
ns
14
ns
4.8
ns
1.8
nC
1.2
nC
V
GS
= 5V
−−nC
I
D
= 2.5A
VDD 15V
I
D
= 1.2A
V
GS
= 10V
R
L
12.5
R
G
=10
zBody diode characteristics (Source-drain) (Ta=25°C)
V
SD
Pulsed
−−1.2 V I
S
= 2.5A, V
GS
=0VForward voltage
Parameter Symbol
Min. Typ. Max.
Unit
Conditions
TT8J2
Data Sheet
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.02 - Rev.A
zElectrical characteristic curves
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1
V
GS
= -3.0V
V
GS
= -10V
V
GS
= -6.0V
V
GS
= -4.5V
V
GS
= -4.0V
V
GS
= -3.4V
Ta=25°C
Pulsed
0.001
0.01
0.1
1
10
01234
V
DS
= -10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
10
100
1000
0.1 1 10
V
GS
= -4.0V
V
GS
= -4.5V
V
GS
= -10V
Ta=25°C
Pulsed
0.01
0.1
1
10
00.511.5
V
GS
=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0
2
4
6
8
10
0246810
V
GS
= -3.4V
Ta=25°C
Pulsed
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4.0V
V
GS
= -3.0V
V
GS
= -2.6V
10
100
1000
0.1 1 10
V
GS
= -4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
100
1000
0.1 1 10
V
GS
= -10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
1
10
0.01 0.1 1 10
V
DS
= -10V
Pulsed
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
10
100
1000
0.1 1 10
V
GS
= -4.0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Fig.1 Typical Output Characteristics(
) Fig.2 Typical Output Characteristics(
) Fig.3 Typical Transfer Characteristics
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
)
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
)
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.8 Forward Transfer Admittance
vs. Drain Current
DRAIN CURRENT : -I
D
[A]
DRAIN-SOURCE VOLTAGE : -V
DS
[V] DRAIN-SOURCE VOLTAGE : -V
DS
[V]
DRAIN CURRENT : -I
D
[A]
DRAIN CURRENT : -I
D
[A]
GATE-SOURCE VOLTAGE : -V
GS
[V]
DRAIN-CURRENT : -I
D
[A]
STATIC
DRAIN
-
SOURCE
ON
-
STATE
RESISTANCE : R
DS
(ON)[m
]
DRAIN-CURRENT : -I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m
]
DRAIN-CURRENT : -I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m
]
DRAIN-CURRENT : -I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m
]
FORWARD TRANSFER ADMITTANCE :
|
Yfs
|
[
S
]
DRAIN-CURRENT : -I
D
[A]
REVERSE DRAIN CURRENT : -Is [A]
SOURCE-DRAIN VOLTAGE : -V
SD
[V]

TSM-107-02-L-DV-A

Mfr. #:
Manufacturer:
Samtec
Description:
TSM - Samtec 2.54mm Dual Row Vertical Surface Mount Header 8.13mm Post Height
Lifecycle:
New from this manufacturer.
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