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FGH50N6S2

P1-P3P4-P6P7-P8
©2003 Fairchild Semiconductor Corporation FGH50N6S2 RevA3
FGH50N6S2
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves T
J
= 25°C unless otherwise noted
E
ON2
, TURN-ON ENERGY LOSS (µJ)
750
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
500
1000
0
2000
10 20 30 40 50 600
1500
1250
1750
250
2250
2500
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
R
G
= 3Ω, L = 200µH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10 20 30 40 50 600
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
600
400
800
0
1200
1000
1400
200
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
R
G
= 3Ω, L = 200µH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(ON)I
, TURN-ON DELAY TIME (ns)
0
5
10
15
20
10 20 30 40 50 600
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
25
R
G
= 3Ω, L = 200µH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
, RISE TIME (ns)
0
30
10
70
60
40
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
2010 30 40 50 600
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
=15V
50
20
R
G
= 3Ω, L = 200µH, V
CE
= 390V
60
40
50
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
90
80
70
V
GE
= 10V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 10V, V
GE
= 15V, T
J
= 125
o
C
2010 30 40 50 600
100
R
G
= 3Ω, L = 200µH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, FALL TIME (ns)
25
50
75
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
100
2010 30 40 50 600
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
125
R
G
= 3Ω, L = 200µH, V
CE
= 390V
©2003 Fairchild Semiconductor Corporation FGH50N6S2 RevA3
FGH50N6S2
Figure 13. Transfer Characteristic Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves T
J
= 25°C unless otherwise noted
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
25
50
5678 10
V
GE
, GATE TO EMITTER VOLTAGE (V)
9
75
150
175
4
125
100
200
225
250
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
CE
= 10V
TJ = -55
o
C
TJ = 25
o
C
TJ = 125
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
2
10
0
6
I
G(REF)
= 1mA, R
L
= 10Ω
V
CE
= 200V
4
8
12
V
CE
= 600V
10 20 30 400
V
CE
= 400V
14
16
50 60 70 80
I
CE
= 15A
0
1.5
50 75 100
T
C
, CASE TEMPERATURE (
o
C)
2.0
12525 150
3.0
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
R
G
= 3Ω, L = 200µH, V
CE
= 390V, V
GE
= 15V
2.5
I
CE
= 60A
I
CE
= 30A
1.0
E
TOTAL
= E
ON2
+ E
OFF
0.5
0.1
10 100
R
G
, GATE RESISTANCE (Ω)
1.0 1000
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 15A
I
CE
= 30A
I
CE
= 60A
T
J
= 125
o
C, L = 200µH, V
CE
= 390V, V
GE
= 15V
100
10
1
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
C
RES
0 1020304050
0.0
1.0
3.0
3.5
4.0
2.0
FREQUENCY = 1MHz
C
OES
C
IES
60 70 80 90 100
0.5
1.5
1
2.5
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
1.7
9
1.8
2.0
1.9
8 101112 16
2.1
2.3
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
= 45A
PULSE DURATION = 250µs
I
CE
= 30A
I
CE
= 15A
2.2
7131415
DUTY CYCLE < 0.5%
2.5
2.4
©2003 Fairchild Semiconductor Corporation FGH50N6S2 RevA3
FGH50N6S2
Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case
Typical Performance Curves T
J
= 25°C unless otherwise noted
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
JC
, NORMALIZED THERMAL RESPONSE
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.10
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.50
0.20
0.05
0.02
0.01
Test Circuit and Waveforms
Figure 20. Inductive Switching Test Circuit
Figure 21. Switching Test Waveforms
R
G
= 3
Ω
L = 200
µ
H
V
DD
= 390V
+
-
FGH50N6S2D
DIODE TA49392
FGH50N6S2
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
P1-P3P4-P6P7-P8

FGH50N6S2

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IGBT 600V 75A 463W TO247
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