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PBSS4032NX,115
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
PBSS4032NX_1
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 201
0. All rights rese
rved.
Product data sheet
Rev
. 01 — 1 April 2010
6 of 15
NXP Semiconductors
PBSS4032NX
30 V
, 4.7 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1]
Pulse test: t
p
≤
300
μ
s;
δ≤
0.02.
T
able 7.
Characteristics
T
amb
=2
5
°
C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Ty
p
Max
Unit
I
CBO
collector-base cut-off
current
V
CB
=3
0V
;
I
E
= 0 A
-
-
100
nA
V
CB
=3
0V
;
I
E
=0A
;
T
j
=1
5
0
°
C
--5
0
μ
A
I
CES
collector-emitter
cut-off current
V
CE
=2
4V
;
V
BE
= 0 V
-
-
100
nA
I
EBO
emitter-base cut-off
current
V
EB
=5V
;
I
C
= 0 A
-
-
100
nA
h
FE
DC current gain
V
CE
=2V
[1]
I
C
= 500 mA
300
500
-
I
C
= 1 A
300
500
-
I
C
= 2 A
250
450
-
I
C
= 4 A
200
350
-
I
C
= 6 A
150
275
-
V
CEsat
collector-emitter
saturation voltage
[1]
I
C
=1A
;
I
B
= 50 mA
-
90
125
mV
I
C
=1A
;
I
B
= 10 mA
-
130
180
mV
I
C
=2A
;
I
B
= 40 mA
-
150
210
mV
I
C
=4A
;
I
B
= 400 mA
-
180
250
mV
I
C
=4A
;
I
B
= 40 mA
-
250
375
mV
I
C
=5
.
4A
;
I
B
= 270 mA
-
240
340
mV
R
CEsat
collector-emitter
saturation resistance
I
C
=4A
;
I
B
=4
0
0m
A
[1]
-4
5
6
2
.
5
m
Ω
V
BEsat
base-emitter
saturation voltage
I
C
=1A
;
I
B
=1
0
0m
A
[1]
-
0.75
0.9
V
I
C
=4A
;
I
B
=4
0
0m
A
[1]
-
0.92
1.05
V
V
BEon
base-emitter turn-on
voltage
V
CE
=2V
;
I
C
=2A
[1]
-
0.77
0.85
V
t
d
delay time
V
CC
=1
2
.
5V
;
I
C
=1A
;
I
Bon
=0
.
0
5A
;
I
Boff
=
−
0.05 A
-3
5
-n
s
t
r
rise time
-
30
-
ns
t
on
turn-on time
-
65
-
ns
t
s
storage time
-
150
-
ns
t
f
fall time
-
65
-
ns
t
off
turn-off time
-
215
-
ns
f
T
transition frequency
V
CE
=1
0V
;
I
C
= 100 mA;
f=1
0
0M
H
z
-
145
-
MHz
C
c
collector capacitance
V
CB
=1
0V
;
I
E
=i
e
=0A
;
f=1M
H
z
-6
5
-p
F
PBSS4032NX_1
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 201
0. All rights rese
rved.
Product data sheet
Rev
. 01 — 1 April 2010
7 of 15
NXP Semiconductors
PBSS4032NX
30 V
, 4.7 A NPN low V
CEsat
(BISS) transistor
V
CE
=2V
(1)
T
amb
= 100
°
C
(2)
T
amb
=2
5
°
C
(3)
T
amb
=
−
55
°
C
T
amb
=2
5
°
C
Fig 5.
DC c
urrent gain as a f
unction of collector
current; typical values
Fig 6.
Collector current as a fun
ction of
collector-emitter voltage; typical values
V
CE
=2V
(1)
T
amb
=
−
55
°
C
(2)
T
amb
=2
5
°
C
(3)
T
amb
= 100
°
C
I
C
/I
B
=2
0
(1)
T
amb
=
−
55
°
C
(2)
T
amb
=2
5
°
C
(3)
T
amb
= 100
°
C
Fig 7.
Base-emitter voltage as a function of collector
current; typical values
Fig 8.
Base-emitter saturatio
n voltage as a function
of collector cu
rrent; typical values
006aac194
400
600
200
800
1000
h
FE
0
I
C
(mA)
−
10
−
1
−
10
4
−
10
3
−
1
−
10
2
−
10
(1)
(3)
(2)
V
CE
(V)
0.0
5.0
4.0
2.0
3.0
1.0
006aac195
4.0
8.0
12.0
I
C
(A)
0.0
I
B
(mA) = 70
63
56
49
42
35
28
21
14
7
006aac196
0.4
0.8
1.2
V
BE
(V)
0.0
I
C
(mA)
10
−
1
10
4
10
3
11
0
2
10
(1)
(3)
(2)
006aac197
0.4
0.8
1.2
V
BEsat
(V)
0.0
I
C
(mA)
10
−
1
10
4
10
3
11
0
2
10
(1)
(3)
(2)
PBSS4032NX_1
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 201
0. All rights rese
rved.
Product data sheet
Rev
. 01 — 1 April 2010
8 of 15
NXP Semiconductors
PBSS4032NX
30 V
, 4.7 A NPN low V
CEsat
(BISS) transistor
I
C
/I
B
=2
0
(1)
T
amb
= 100
°
C
(2)
T
amb
=2
5
°
C
(3)
T
amb
=
−
55
°
C
T
amb
=2
5
°
C
(1)
I
C
/I
B
= 100
(2)
I
C
/I
B
=5
0
(3)
I
C
/I
B
=1
0
Fig 9.
Collector-emitter
saturation voltage as a
function of collector current; typical values
Fig 10.
Coll
ector-emitter satura
tion voltag
e as a
function of collector
current; typical value
s
I
C
/I
B
=2
0
(1)
T
amb
= 100
°
C
(2)
T
amb
=2
5
°
C
(3)
T
amb
=
−
55
°
C
T
amb
=2
5
°
C
(1)
I
C
/I
B
= 100
(2)
I
C
/I
B
=5
0
(3)
I
C
/I
B
=1
0
Fig 1
1.
Collector-emitter saturation re
sistance as a
function of collector current; typical values
Fig 12.
Collector-emitter satur
ation resistance as a
function of collector
current; typical value
s
006aac198
I
C
(mA)
10
−
1
10
4
10
3
11
0
2
10
10
−
1
1
V
CEsat
(V)
10
−
2
(1)
(3)
(2)
006aac199
I
C
(mA)
10
−
1
10
4
10
3
11
0
2
10
10
−
1
1
V
CEsat
(V)
10
−
2
(1)
(3)
(2)
I
C
(mA)
10
−
1
10
4
10
3
11
0
2
10
006aac200
1
10
−
1
10
2
10
10
3
R
CEsat
(
Ω
)
10
−
2
(1)
(2)
(3)
I
C
(mA)
10
−
1
10
4
10
3
11
0
2
10
006aac201
1
10
−
1
10
2
10
10
3
R
CEsat
(
Ω
)
10
−
2
(1)
(2)
(3)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
PBSS4032NX,115
Mfr. #:
Buy PBSS4032NX,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT Single PNP 30V 4.7A 600mW 145MHz
Lifecycle:
New from this manufacturer.
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PBSS4032NX,115