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IPI03N03LA

P1-P3P4-P6P7-P9P10-P10
IPI03N03LA, IPP03N03LA
13 Avalanche characteristics 14 Typ. gate charge
I
AS
=f(t
AV
); R
GS
=25 Ω
V
GS
=f(Q
gate
); I
D
=40 A pulsed
parameter: T
j(start)
parameter: V
DD
15 Drain-source breakdown voltage 16 Gate charge waveforms
V
BR(DSS)
=f(T
j
); I
D
=1 mA
5 V
15 V
20 V
0
2
4
6
8
10
12
0 20406080100
Q
gate
[nC]
V
GS
[V]
20
21
22
23
24
25
26
27
28
29
-60 -20 20 60 100 140 180
T
j
[°C]
V
BR(DSS)
[V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C150 °C
1
10
100
1 10 100 1000
t
AV
[µs]
I
AV
[A]
Rev. 1.91 page 7 2008-04-29
IPI03N03LA, IPP03N03LA
PG-TO262-3-2: Outline
PG-TO220-3-2: Outline
Packaging
Rev. 1.91 page 8 2008-04-29
IPI03N03LA, IPP03N03LA
PG-TO220-3-2: Outline
Packaging
Rev. 1.91 page 9 2008-04-29
P1-P3P4-P6P7-P9P10-P10

IPI03N03LA

Mfr. #:
Buy IPI03N03LA
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 25V 80A I2PAK-3
Lifecycle:
New from this manufacturer.
Delivery:
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