© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 2
1 Publication Order Number:
NVMFS4C01N/D
NVMFS4C01N
Power MOSFET
30 V, 0.67 mW, 370 A, Single N−Channel,
Logic Level, SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
DS(on)
to Minimize Conduction Losses
• Low Q
G
and Capacitance to Minimize Driver Losses
• NVMFS4C01NWF − Wettable Flanks Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
"20 V
Continuous Drain Cur-
rent R
q
JC
(Notes 1, 3)
Steady
State
T
C
= 25°C I
D
370 A
Power Dissipation
R
q
JC
(Notes 1, 3)
T
C
= 25°C P
D
161 W
Continuous Drain Cur-
rent R
q
JA
(Notes 1, 2,
3)
Steady
State
T
A
= 25°C I
D
57 A
Power Dissipation
R
q
JA
(Notes 1, 2, 3)
T
A
= 25°C P
D
3.84 W
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 ms
I
DM
900 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
175
°C
Source Current (Body Diode) I
S
110 A
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 35 A)
E
AS
862 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
R
q
JC
0.93
°C/W
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
www.onsemi.com
4C01xx
AYWZZ
1
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
0.67 mW @ 10 V
370 A
0.95 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5)
S
S
S
G
D
D
D
D
Device Package Shipping
†
ORDERING INFORMATION
NVMFS4C01NT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Ree
NVMFS4C01NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Ree
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NVMFS4C01NWFT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Ree
NVMFS4C01NWFT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Ree
4C01N = Specific Device Code for
NVMFS4C01N
4C01WF= Specific Device Code of
NVMFS4C01NWF
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty