BA682-GS18

BA682, BA683
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 04-Mar-13
1
Document Number: 85530
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Band Switching Diodes
MECHANICAL DATA
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
Silicon planar diodes
Low dynamic forward resistance
Low diode capacitance
High reverse impedance
AEC-Q101 qualified
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
Band switching in VHF-tuners
Note
(1)
T
amb
= 25 °C, unless otherwise specified
Note
(1)
T
amb
= 25 °C, unless otherwise specified
Note
(1)
T
amb
= 25 °C, unless otherwise specified
94 9371
PARTS TABLE
PART TYPE DIFFERENTIATION ORDERING CODE REMARKS
BA682 V
R
= 35 V, r
f
at I
F
3 mA = max. 0.7 BA682-GS18 or BA682-GS08 Tape and reel
BA683 V
R
= 35 V, r
f
at I
F
3 mA = max. 1.2 BA683-GS18 or BA683-GS08 Tape and reel
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Reverse voltage V
R
35 V
Forward continuous current I
F
100 mA
THERMAL CHARACTERISTICS
(1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction to ambient air
On PC board
50 mm x 50 mm x 1.6 mm
R
thJA
500 K/W
Junction temperature T
j
150 °C
Storage temperature range T
stg
- 55 to + 150 °C
ELECTRICAL CHARACTERISTICS
(1)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 100 mA V
F
1000 mV
Reverse current V
R
= 20 V I
R
50 nA
Diode capacitance
f = 100 MHz, V
R
= 1 V C
D1
1.5 pF
f = 100 MHz, V
R
= 3 V
BA682 C
D2
1.25 pF
BA683 C
D2
1.2 pF
Dynamic forward resistance
f = 200 MHz, I
F
= 3 mA
BA682 r
f1
0.7
BA683 r
f1
1.2
f = 200 MHz, I
F
= 10 mA
BA682 r
f2
0.5
BA683 r
f2
0.9
BA682, BA683
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 04-Mar-13
2
Document Number: 85530
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified
Fig. 1 - Dynamic Forward Resistance vs. Forward Current Fig. 1 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): MiniMELF SOD-80
0.1 1 10
0.1
1
10
100
100
94 9074
r
f
- Differential Forward Resistance (Ω)
I
F
- Forward Current (mA)
BA683
BA682
f = 200 MHz
T
j
= 25 °C
0.1
0
0.5
1.0
1.5
2.0
3.0
C
D
- Diode Capacitance (pF)
10010
94 9075
2.5
V
R
- Reverse Voltage (V)
1
BA682
BA683
f = 200 MHz
T
j
= 25 °C
Cathode indentification
0.47 (0.019) max.
2.5 (0.098) max.
1.25 (0.49) min.
3.7 (0.146)
3.3 (0.130)
5 (0.197) ref.
2 (0.079) min.
1.6 (0.063)
1.4 (0.055)
Foot print recommendation:
*
* The gap between plug and glass can
be either on cathode or anode side
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
Legal Disclaimer Notice
www.vishay.com
Vishay
Revision: 02-Oct-12
1
Document Number: 91000
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BA682-GS18

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
PIN Diodes 35 Volt 100mA Band
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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