August 2006 Rev 4 1/15
15
STD100NH03L
N-channel 30V - 0.005 - 60A - DPAK
STripFET™ III Power MOSFET
General features
R
DS(on)
* Qg industry’s benchmark
Conduction losses reduced
Switching losses reduced
Low threshold device
Description
This device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This is suitable fot the most demanding DC-DC
converter application where high efficiency is to
be achieved.
Applications
Switching application
Internal schematic diagram
Type
V
DSSS
R
DS(on)
I
D
STD100NH03L 30V <0.0055 60A
(1)
1. Value limited by wire bonding
1
3
DPAK
www.st.com
Order codes
Part number Marking Package Packaging
STD100NH03LT4 D100NH03L DPAK Tape & reel
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Contents STD100NH03L
2/15
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Obsolete Product(s) - Obsolete Product(s)
STD100NH03L Electrical ratings
3/15
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 30 V
V
DGR
Drain-gate voltage (R
GS
= 20K)30V
V
GS
Gate-source voltage ± 20 V
I
D
(1)
1. Value limited by wire bonding.
Drain current (continuous) at T
C
= 25°C 60 A
I
D
(1)
Drain current (continuous) at T
C
=100°C 60 A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 240 A
P
TOT
Total dissipation at T
C
= 25°C 100 W
Derating factor 0.66 W/°C
E
AS
(3)
3. Starting T
J
= 25
o
C, I
D
= 30A, V
DD
= 15V
Single pulse avalanche energy 700 mJ
T
stg
Storage temperature
-55 to 175 °C
T
J
Max. operating junction temperature
Table 2. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case Max 1.5 °C/W
R
thJA
Thermal resistance junction-ambient Max 100 °C/W
R
thJ-PCB
Thermal resistance junction-PCB Max 43 °C/W
T
l
Maximum lead temperature for soldering
purpose
275 °C

STD100NH03LT4

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 30 Volt 60 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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