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CAT93C46VI-GT3

P1-P3P4-P6P7-P9P10-P12P13-P13
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 10
1 Publication Order Number:
CAT93C46/D
CAT93C46
1 Kb Microwire Serial
EEPROM
Description
The CAT93C46 is a 1 Kb Serial EEPROM memory device which is
configured as either 64 registers of 16 bits (ORG pin at V
CC
) or 128
registers of 8 bits (ORG pin at GND). Each register can be written (or
read) serially by using the DI (or DO) pin. The CAT93C46 features a
self−timed internal write with auto−clear. On−chip Power−On Reset
circuit protects the internal logic against powering up in the wrong
state.
Features
• High Speed Operation: 2 MHz
• 1.8 V to 5.5 V Supply Voltage Range
• Selectable x8 or x16 Memory Organization
• Self−Timed Write Cycle with Auto−Clear
• Software Write Protection
• Power−up Inadvertant Write Protection
• Low Power CMOS Technology
• 1,000,000 Program/Erase Cycles
• 100 Year Data Retention
• Industrial Temperature Range
• 8−pin PDIP, SOIC, TSSOP and 8−pad TDFN Packages
• This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant*
Figure 1. Functional Symbol
DO
GND
CAT93C46
V
CC
ORG
CS
SK
DI
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 13 of this data sheet.
ORDERING INFORMATION
PIN CONFIGURATIONS
GND
NC
V
CC
DO
DI
SK
CS
1
ORG
PDIP (L), SOIC (V, X),
TSSOP (Y), TDFN (VP2)*
(Top View)
Chip SelectCS
Clock InputSK
Serial Data InputDI
Serial Data OutputDO
Power SupplyV
CC
GroundGND
FunctionPin Name
PIN FUNCTION
Memory OrganizationORG
No ConnectionNC
Note: When the ORG pin is connected to V
CC
, the
x16 organization is selected. When it is connected
to ground, the x8 organization is selected. If the
ORG pin is left unconnected, then an internal pullup
device will select the x16 organization.
SOIC−8
V, W SUFFIX
CASE 751BD
PDIP−8
L SUFFIX
CASE 646AA
TDFN−8*
VP2 SUFFIX
CASE 511AK
TSSOP−8
Y SUFFIX
CASE 948AL
SOIC−8
X SUFFIX
CASE 751BE
DI
GND
ORG
SK
CS
V
CC
NC
1
DO
SOIC (W)
(Top View)
* Not Recommended for New Designs
CAT93C46
http://onsemi.com
2
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter Value Units
Storage Temperature −65 to +150 °C
Voltage on Any Pin with Respect to Ground (Note 1) −0.5 to +6.5 V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V
CC
+ 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than V
CC
+ 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter Min Units
N
END
(Note 3) Endurance 1,000,000 Program / Erase Cycles
T
DR
Data Retention 100 Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Block Mode, V
CC
= 5 V, 25°C
Table 3. D.C. OPERATING CHARACTERISTICS (V
CC
= +1.8 V to +5.5 V, T
A
= −40°C to +85°C, unless otherwise specified.)
Symbol Parameter Test Conditions Min Max Units
I
CC1
Power Supply Current (Write) f
SK
= 1 MHz
V
CC
= 5.0 V
1 mA
I
CC2
Power Supply Current (Read) f
SK
= 1 MHz
V
CC
= 5.0 V
500
mA
I
SB1
Power Supply Current (Standby) (x8 Mode) V
IN
= GND or V
CC
,
CS = GND
ORG = GND
2
mA
I
SB2
Power Supply Current (Standby) (x16Mode) V
IN
= GND or V
CC
,
CS = GND
ORG = Float or V
CC
1
mA
I
LI
Input Leakage Current V
IN
= GND to V
CC
1
mA
I
LO
Output Leakage Current V
OUT
= GND to V
CC
,
CS = GND
1
mA
V
IL1
Input Low Voltage 4.5 V v V
CC
< 5.5 V −0.1 0.8 V
V
IH1
Input High Voltage 4.5 V v V
CC
< 5.5 V 2 V
CC
+ 1 V
V
IL2
Input Low Voltage 1.8 V v V
CC
< 4.5 V 0 V
CC
x 0.2 V
V
IH2
Input High Voltage 1.8 V v V
CC
< 4.5 V V
CC
x 0.7 V
CC
+ 1 V
V
OL1
Output Low Voltage 4.5 V v V
CC
< 5.5 V
I
OL
= 2.1 mA
0.4 V
V
OH1
Output High Voltage 4.5 V v V
CC
< 5.5 V
I
OH
= −400 mA
2.4 V
V
OL2
Output Low Voltage 1.8 V v V
CC
< 4.5 V
I
OL
= 1 mA
0.2 V
V
OH2
Output High Voltage 1.8 V v V
CC
< 4.5 V
I
OH
= −100 mA
V
CC
− 0.2 V
CAT93C46
http://onsemi.com
3
Table 4. PIN CAPACITANCE (T
A
= 25°C, f = 1 MHz, V
CC
= 5 V)
Symbol
Test Conditions Min Typ Max Units
C
OUT
(Note 4) Output Capacitance (DO) V
OUT
= 0 V 5 pF
C
IN
(Note 4) Input Capacitance (CS, SK, DI, ORG) V
IN
= 0 V 5 pF
4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
Table 5. A.C. CHARACTERISTICS (V
CC
= +1.8 V to +5.5 V, T
A
= −40°C to +85°C, unless otherwise specified.) (Note 5)
Symbol
Parameter
Limits
Units
Min Max
t
CSS
CS Setup Time 50 ns
t
CSH
CS Hold Time 0 ns
t
DIS
DI Setup Time 100 ns
t
DIH
DI Hold Time 100 ns
t
PD1
Output Delay to 1 0.25
ms
t
PD0
Output Delay to 0 0.25
ms
t
HZ
(Note 6) Output Delay to High−Z 100 ns
t
EW
(Note 7) Program/Erase Pulse Width 5 ms
t
CSMIN
Minimum CS Low Time 0.25
ms
t
SKHI
Minimum SK High Time 0.25
ms
t
SKLOW
Minimum SK Low Time 0.25
ms
t
SV
Output Delay to Status Valid 0.25
ms
SK
MAX
Maximum Clock Frequency DC 2000 kHz
5. Test conditions according to “AC Test Conditions” table.
6. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
7. t
EW
is 10 ms max for ERAL and WRAL operations.
Table 6. POWER−UP TIMING (Notes 8 and 9)
Symbol
Parameter Max Units
t
PUR
Power−up to Read Operation 1 ms
t
PUW
Power−up to Write Operation 1 ms
8. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
9. t
PUR
and t
PUW
are the delays required from the time V
CC
is stable until the specified operation can be initiated.
Table 7. A.C. TEST CONDITIONS
Input Rise and Fall Times v 50 ns
Input Pulse Voltages 0.4 V to 2.4 V 4.5 V v V
CC
v 5.5 V
Timing Reference Voltages 0.8 V, 2.0 V 4.5 V v V
CC
v 5.5 V
Input Pulse Voltages 0.2 V
CC
to 0.7 V
CC
1.8 V v V
CC
v 4.5 V
Timing Reference Voltages 0.5 V
CC
1.8 V v V
CC
v 4.5 V
Output Load Current Source I
OLmax
/I
OHmax
; C
L
= 100 pF
P1-P3P4-P6P7-P9P10-P12P13-P13

CAT93C46VI-GT3

Mfr. #:
Buy CAT93C46VI-GT3
Manufacturer:
ON Semiconductor
Description:
EEPROM 1K-Bit Microwire Serial EEPROM
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