KSC2310RTA

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

KSC2310

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25°C unless otherwise noted

Electrical Characteristics

T

a

=25°C unless otherwise noted

h

FE

Classification

Symbol Parameter Ratings Units

V

CBO

Collector-Base Voltage 200 V

V

CEO

Collector-Emitter Voltage 150 V

V

EBO

Emitter-Base Voltage 5 V

I

C

Collector Current 50 mA

P

C

Collector Power Dissipation 800 mW

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature -55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

=100µA, I

E

=0 200 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

=5mA, I

B

=0 150 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

=100µA, I

C

=0 5 V

I

CBO

Collector Cut-off Current V

CB

=200V, I

E

=0 0.1 µA

h

FE

DC Current Gain V

CE

=5V, I

C

=10mA 40 240

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

=10mA, I

B

=1mA 0.5 V

f

T

Current Gain Bandwidth Product V

CE

=30V, I

C

=10mA 100 MHz

C

ob

Output Capacitance V

CB

=10V, I

E

=0, f=1MHz 3.5 5 pF

Classification R O Y

h

FE

40 ~ 80 70 ~ 140 120 ~ 240

KSC2310

High Voltage Power Amplifier

• Collector-Base Voltage : V

CBO

=200V

• Current Gain Bandwidth Product : f

T

=100MHz

TO-92L

1

1. Emitter 2. Collector 3. Base

©2002 Fairchild Semiconductor Corporation

KSC2310

Rev. A2, September 2002

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Current Gain Bandwidth Product

Figure 5. Safe Operating Area Figure 6. Power Derating

024681012

0

10

20

30

40

50

I

B

= 1000

µ

A

I

B

= 500µA

I

B

= 400µA

I

B

= 300

µ

A

I

B

= 200

µ

A

I

B

= 150

µ

A

I

B

= 100

µ

A

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

110

10

100

1000

V

CE

= 5V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

0.1 1 10 100

0.01

0.1

1

10

I

C

= 10 I

B

V

CE

(sat)

V

BE

(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

0.1 1 10 100

1

10

100

1000

V

CE

= 30V

f

T

[MHz], CURRENT GAIN BANDWIDTH PRODUCT

I

C

[mA], COLLECTOR CURRENT

1 10 100 1000

1

10

100

1000

*300ms

DC

1. T

a

=25

o

C

2. *Single Pulse

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0

25 50 75 100 125 150 175

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

P

C

[W], POWER DISSIPATION

T

a

[

o

C], AMIBIENT TEMPERATURE

Package Dimensions

KSC2310

4.90

±0.20

0.50

±0.10

1.27TYP

[1.27

±0.20

]

0.45

±0.10

0.45

±0.10

0.80

±0.10

0.70MAX.

1.00MAX.

2.54 TYP

8.00

±0.20

1.70

±0.20

1.00

±0.10

13.50

±0.40

3.90

±0.20

3.90

±0.20

1.45

±0.20

TO-92L

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

KSC2310RTA

Mfr. #:

Manufacturer:

ON Semiconductor / Fairchild

Description:

Bipolar Transistors - BJT NPN Epitaxial Sil

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

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