©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSC2310
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage 200 V
V
CEO
Collector-Emitter Voltage 150 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 50 mA
P
C
Collector Power Dissipation 800 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=100µA, I
E
=0 200 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=5mA, I
B
=0 150 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=100µA, I
C
=0 5 V
I
CBO
Collector Cut-off Current V
CB
=200V, I
E
=0 0.1 µA
h
FE
DC Current Gain V
CE
=5V, I
C
=10mA 40 240
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=1mA 0.5 V
f
T
Current Gain Bandwidth Product V
CE
=30V, I
C
=10mA 100 MHz
C
ob
Output Capacitance V
CB
=10V, I
E
=0, f=1MHz 3.5 5 pF
Classification R O Y
h
FE
40 ~ 80 70 ~ 140 120 ~ 240
KSC2310
High Voltage Power Amplifier
• Collector-Base Voltage : V
CBO
=200V
• Current Gain Bandwidth Product : f
T
=100MHz
TO-92L
1
1. Emitter 2. Collector 3. Base