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SIGC158T120R3LEX1SA2

P1-P3P4-P6P7-P9
SIGC158T120R3LE
L7698N, L7698U, L7698F 4 Rev. 2.3, 19.08.2015
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage, T
vj
=25C
V
CE
1200
V
DC collector current, limited by T
vj max
2
I
C
-
A
Pulsed collector current, t
p
limited by T
vj max
3
I
C,puls
450
A
Gate-emitter voltage
V
GE
20
V
Junction temperature range
T
vj
-55 ... +175
°C
Operating junction temperature
T
vj
-55 ... +150
°C
Short circuit data
3 /
4
V
GE
=15V, V
CC
=900V, T
vj
=125°C
t
sc
10
µs
Reverse bias safe operating area
3
(RBSOA)
I
C,max
=300A, V
CE,max
=1200V, T
vj
125°C
Static Characteristics (tested on wafer), T
vj
=25
C
Parameter
Symbol
Conditions
Value
Unit
min.
typ.
max.
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V, I
C
=6mA
1200
-
-
V
Collector-emitter saturation voltage
V
CEsat
V
GE
=15V, I
C
=45A
0.93
1.13
1.32
Gate-emitter threshold voltage
V
GE(th)
I
C
=6mA, V
GE
=V
CE
5.0
5.8
6.5
Zero gate voltage collector current
I
CES
V
CE
=1200V, V
GE
=0V
-
-
20
µA
Gate-emitter leakage current
I
GES
V
CE
=0V, V
GE
=20V
-
-
600
nA
Integrated gate resistor
r
G
5
Electrical Characteristics
3
Parameter
Symbol
Conditions
Value
Unit
min.
typ.
max.
Collector-emitter saturation
voltage
T
vj
=25C
V
CEsat
V
GE
=15V, I
C
=150A
1.4
1.7
2.1
V
T
vj
=125C
-
1.9
-
Input capacitance
C
ies
V
CE
=25V,
V
GE
=0V, f=1MHz
T
vj
=25C
-
10766
-
pF
Reverse transfer capacitance
C
res
-
488
-
2
Depending on thermal properties of assembly.
3
Not subject to production test - verified by design/characterization.
4
Allowed number of short circuits: <1000; time between short circuits: >1s.
SIGC158T120R3LE
L7698N, L7698U, L7698F 5 Rev. 2.3, 19.08.2015
Further Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design and mounting
technology and can therefore not be specified for a bare die.
Application example
FS150R12KT3
Rev. 2.1
SIGC158T120R3LE
L7698N, L7698U, L7698F 6 Rev. 2.3, 19.08.2015
Chip Drawing
E = Emitter
G = Gate
T = Test pad do not contact
G
E
T
E
E
E
E
E
E
E
P1-P3P4-P6P7-P9

SIGC158T120R3LEX1SA2

Mfr. #:
Buy SIGC158T120R3LEX1SA2
Manufacturer:
Infineon Technologies
Description:
IGBT 1200V 150A DIE
Lifecycle:
New from this manufacturer.
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