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IXFN80N50Q3

P1-P3P4-P5
© 2011 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 500 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 500 V
V
GSS
Continuous ±30 V
V
GSM
Transient ±40 V
I
D25
T
C
= 25°C 63 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
240 A
I
A
T
C
= 25°C 80A
E
AS
T
C
= 25°C5J
dv/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 50 V/ns
P
D
T
C
= 25°C 780 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
V
ISOL
50/60 Hz, RMS, t = 1minute 2500 V~
I
ISOL
≤ 1mA, t = 1s 3000 V~
M
d
Mounting Torque for Base Plate 1.5/13 Nm/lb.in.
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
Weight 30 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 3mA 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA 3.5 6.5 V
I
GSS
V
GS
= ±30V, V
DS
= 0V ±200 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 50 μA
T
J
= 125°C 2 mA
R
DS(on)
V
GS
= 10V, I
D
= 40A, Note 1 65 mΩ
HiperFET
TM
Power MOSFET
Q3-Class
IXFN80N50Q3
V
DSS
= 500V
I
D25
= 63A
R
DS(on)
≤≤
≤≤
≤ 65m
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 250ns
DS100303(03/11)
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Features
z
International Standard Package
z
Low Intrinsic Gate Resistance
z
miniBLOC with Aluminum Nitride
Isolation
z
Low Package Inductance
z
Fast Intrinsic Rectifier
z
Low R
DS(on)
and Q
G
Advantages
z
High Power Density
z
Easy to Mount
z
Space Savings
Applications
z
DC-DC Converters
z
Battery Chargers
z
Switch-Mode and Resonant-Mode
Power Supplies
z
DC Choppers
z
Temperature and Lighting Controls
Advance Technical Information
miniBLOC
E153432
G
D
S
S
G = Gate D = Drain
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
IXFN80N50Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 20V, I
D
= 40A, Note 1 35 55 S
C
iss
10 nF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 1260 pF
C
rss
115 pF
R
Gi
Gate Input Resistance 0.15 Ω
t
d(on)
30 ns
t
r
20 ns
t
d(off)
43 ns
t
f
15 ns
Q
g(on)
200 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 40A 77 nC
Q
gd
90 nC
R
thJC
0.16 °C/W
R
thCS
0.05 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 80 A
I
SM
Repetitive, Pulse Width Limited by T
JM
320 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.4 V
t
rr
250 ns
Q
RM
1.8 μC
I
RM
15.6
A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 40A
R
G
= 1Ω (External)
I
F
= 40A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
(M4 screws (4x) supplied)
SOT-227B (IXFN) Outline
© 2011 IXYS CORPORATION, All Rights Reserved
IXFN80N50Q3
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8
V
7
V
9
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
180
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7
V
9
V
8
V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
10
20
30
40
50
60
70
80
0 2 4 6 8 10 12
V
DS
- Volts
I
D
- Amperes
7
V
8V
6V
V
GS
= 10V
9V
Fig. 4. R
DS(on)
Normalized to I
D
= 40A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 80A
I
D
= 40A
Fig. 5. R
DS(on)
Normalized to I
D
= 40A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0 20 40 60 80 100 120 140 160 180
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
10
20
30
40
50
60
70
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
P1-P3P4-P5

IXFN80N50Q3

Mfr. #:
Buy IXFN80N50Q3
Manufacturer:
Littelfuse
Description:
MOSFET Q3Class HiPerFET Pwr MOSFET 500V/63A
Lifecycle:
New from this manufacturer.
Delivery:
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