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M74HC00M1R

P1-P3P4-P6P7-P8
1/8July 2001
■ HIGH SPEED:
t
PD
= 8ns (TYP.) at V
CC
= 6V
■ LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at T
A
=25°C
■ HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 4mA (MIN)
■ BALANCED PROPAGATION DELAYS:
t
PLH
≅ t
PHL
■ WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
■ PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 00
DESCRIPTION
The M74HC00 is an high speed CMOS QUAD
2-INPUT NAND GATE fabricated with silicon gate
C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which enables high noise
immunity and stable output.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M74HC00
QUAD 2-INPUT NAND GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE TUBE T & R
DIP M74HC00B1R
SOP M74HC00M1R M74HC00RM13TR
TSSOP M74HC00TTR
TSSOPDIP SOP
M74HC00
2/8
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
°C; derate to 300mW by 10mW/°C from 65°C to 85°C
RECOMMENDED OPERATING CONDITIONS
PIN No SYMBOL NAME AND FUNCTION
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14
V
CC
Positive Supply Voltage
ABY
LLH
LHH
HLH
HHL
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7 V
V
I
DC Input Voltage -0.5 to V
CC
+ 0.5
V
V
O
DC Output Voltage -0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
± 20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC V
CC
or Ground Current
± 50 mA
P
D
Power Dissipation
500(*) mW
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
2 to 6 V
V
I
Input Voltage 0 to V
CC
V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
t
r
, t
f
Input Rise and Fall Time V
CC
= 2.0V
0 to 1000 ns
V
CC
= 4.5V
0 to 500 ns
V
CC
= 6.0V
0 to 400 ns
M74HC00
3/8
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input t
r
= t
f
= 6ns)
CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/4 (per gate)
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input
Voltage
2.0 1.5 1.5 1.5
V4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
V
IL
Low Level Input
Voltage
2.0 0.5 0.5 0.5
V4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
V
OH
High Level Output
Voltage
2.0
I
O
=-20 µA
1.9 2.0 1.9 1.9
V
4.5
I
O
=-20 µA
4.4 4.5 4.4 4.4
6.0
I
O
=-20 µA
5.9 6.0 5.9 5.9
4.5
I
O
=-4.0 mA
4.18 4.31 4.13 4.10
6.0
I
O
=-5.2 mA
5.68 5.8 5.63 5.60
V
OL
Low Level Output
Voltage
2.0
I
O
=20 µA
0.0 0.1 0.1 0.1
V
4.5
I
O
=20 µA
0.0 0.1 0.1 0.1
6.0
I
O
=20 µA
0.0 0.1 0.1 0.1
4.5
I
O
=4.0 mA
0.17 0.26 0.33 0.40
6.0
I
O
=5.2 mA
0.18 0.26 0.33 0.40
I
I
Input Leakage
Current
6.0
V
I
= V
CC
or GND
± 0.1 ± 1 ± 1 µA
I
CC
Quiescent Supply
Current
6.0
V
I
= V
CC
or GND
11020µA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
TLH
t
THL
Output Transition
Time
2.0 30 75 95 110
ns4.5 8151922
6.0 7131619
t
PLH
t
PHL
Propagation Delay
Time
2.0 27 75 95 110
ns4.5 9151922
6.0 8131619
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
5.0 5101010pF
C
PD
Power Dissipation
Capacitance (note
1)
5.0 20 pF
P1-P3P4-P6P7-P8

M74HC00M1R

Mfr. #:
Buy M74HC00M1R
Manufacturer:
STMicroelectronics
Description:
Logic Gates Quad 2-Input NAND
Lifecycle:
New from this manufacturer.
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