ELECTRICAL CHARACTERISTICS
(f = 2.4 GHz, T
A = +25°C, unless otherwise specified, using our standard test fixture.)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
VDS = 3.3 V
Gate to Source Voltage VGS
−
1.9
−
V
Power Added Efficiency PAE
P
in = +2 dBm
P
out = +22.0 dBm
−
28.0
−
%
Drain Current
I
DS
Note
−
180
−
mA
Input Return Loss IRL Pin = −20 dBm
−
10
−
dB
Output Return Loss ORL
−
10
−
dB
Output Power Pout Pin = +2 dBm 22.0
− −
dBm
Power Gain GP 20.0
− −
dB
VDS = 3.0 V
Gate to Source Voltage VGS
−
1.9
−
V
Power Added Efficiency PAE
P
in = +2 dBm
P
out = +21.0 dBm
−
27.5
−
%
Drain Current
I
DS
Note
−
150
−
mA
Input Return Loss IRL Pin = −20 dBm
−
10
−
dB
Output Return Loss ORL
−
10
−
dB
Output Power Pout Pin = +2 dBm 21.0
− −
dBm
Power Gain GP 19.0
− −
dB
Note I
DS is total Drain currents of Q1 and Q2 part.
DC CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Q1
On-state Resistance1 Ron1 VDS = 0.1 V, VGS = 6 V
−
4.35
− Ω
Drain to Source Breakdown
Voltage1
BVDSS1 IDS = 1.4
µ
A 10.0
− −
V
Gate to Source Breakdown
Voltage1
BVGSS1 IGS = 1.4
µ
A 4.0
− −
V
Gate Threshold Voltage1 Vth1 VDS = 3.5 V, IDS = 1.4 mA 1.15 1.40 1.65 V
Transconductance1 gm1 VDS = 3.5 V, IDS = 25 mA 50 70
−
mS
Q2
On-state Resistance2 Ron2 VDS = 0.1 V, VGS = 6 V
−
1.02
− Ω
Drain to Source Breakdown
Voltage2
BVDSS2 IDS = 8.0
µ
A 10.0
− −
V
Gate to Source Breakdown
Voltage2
BVGSS2 IGS = 8.0
µ
A 4.0
− −
V
Gate Threshold Voltage2 Vth2 VDS = 3.5 V, IDS = 8.0 mA 1.15 1.40 1.65 V
Transconductance2 gm2 VDS = 3.5 V, IDS = 150 mA 290 370
−
mS
Preliminary Data Sheet PU10455EJ01V0DS
4
µ
PD5702TU
