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NRVB130LSFT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 4
1 Publication Order Number:
MBR130LSFT1/D
MBR130LSFT1G
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
Features
• Guardring for Stress Protection
• Low Forward Voltage
• 125°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0
• Package Designed for Optimal Automated Board Assembly
• ESD Ratings: Machine Model, C
Human Body Model, 3B
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics
• Reel Options: MBR130LSFT1G = 3,000 per 7 in reel/8 mm tape
• Device Marking: L3L
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
• Case: Epoxy, Molded
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
MARKING DIAGRAM
L3L = Specific Device Code
M = Date Code
G = Pb−Free Package
http://onsemi.com
SOD−123FL
CASE 498
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 30 VOLTS
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBR130LSFT1G SOD−123FL
(Pb−Free)
3000/Tape & Ree
l
L3LMG
G
NRVB130LSFT1G SOD−123FL
(Pb−Free)
3000/Tape & Ree
l
(Note: Microdot may be in either location)
MBR130LSFT1G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30 V
Average Rectified Forward Current (At Rated V
R
, T
L
= 117°C) I
O
1.0 A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 100 kHz, T
L
= 110°C)
I
FRM
2.0 A
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
I
FSM
40 A
Storage Temperature T
stg
−55 to 150 °C
Operating Junction Temperature T
J
−55 to 125 °C
Voltage Rate of Change (Rated V
R
, T
J
= 25°C) dv/dt 10,000
V/ms
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
R
tjl
R
tjl
R
tja
R
tja
26
21
325
82
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm
2
).
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
V
F
T
J
= 25°C T
J
= 100°C
V
(I
F
= 0.1 A)
(I
F
= 0.7 A)
(I
F
= 1.0 A)
0.29
0.36
0.38
0.18
0.27
0.30
Maximum Instantaneous Reverse Current (Note 3)
I
R
T
J
= 25°C T
J
= 100°C
mA
(V
R
= 30 V) 1.0 25
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.
MBR130LSFT1G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
10
1
0.1
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.10 0.30 0.50
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
V
R
, REVERSE VOLTAGE (VOLTS)
100E−3
10E−3
10E−6
100E−6
3020100
I
R
, REVERSE CURRENT (AMPS)
100E−9
T
J
= 125°C
0.20 0.40 0.80
T
J
= 100°C
10
1
0.1
V
F
, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
0.10 0.30 0.50
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
0.20 0.40 0.7
0
T
J
= 100°C
0.60
1E−3
1E−6
10E−9
1E−9
T
J
= −55°C
T
J
= 25°C
T
J
= 100°C
V
R
, REVERSE VOLTAGE (VOLTS)
100E−3
10E−3
10E−6
100E−6
3
0
20100
I
R
, MAXIMUM REVERSE CURRENT (AMPS)
T
J
= 125°C
1E−3
1E+0
T
J
= −55°C
T
J
= 25°C
T
J
= 100°C
Figure 5. Current Derating
25 45 8565
0
1.0
I
O
, AVERAGE FORWARD CURRENT (AMPS)
T
L
, LEAD TEMPERATURE (°C)
Figure 6. Forward Power Dissipation
0.2 0.6 0.8 1.20 0.4 1
0.6
0
0.3
I
O
, AVERAGE FORWARD CURRENT (AMPS)
P
FO
, AVERAGE POWER DISSIPATION (WATTS)
0.2
0.4
0.6
0.8
1.8
1.2
1.4
1.6
SQUARE WAVE
dc
I
pk
/I
O
= 20
1.4 1.
8
1.6
0.1
0.2
0.5
0.4
105 145125
I
pk
/I
O
= 10
I
pk
/I
O
= 5
I
pk
/I
O
= p
freq = 20 kHz
dc
SQUARE
WAVE
I
pk
/I
O
= p
I
pk
/I
O
= 5
I
pk
/I
O
= 10
I
pk
/I
O
= 20
0.60 0.70
P1-P3P4-P5

NRVB130LSFT1G

Mfr. #:
Buy NRVB130LSFT1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers PPD SCHOTTKY BARRIER RECT
Lifecycle:
New from this manufacturer.
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