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BUX85G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 18
1 Publication Order Number:
BUX85/D
BUX85G
Switch‐mode NPN Silicon
Power Transistors
The BUX85G is designed for high voltage, high speed power
switching applications like converters, inverters, switching regulators,
motor control systems.
Features
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO(sus)
450 Vdc
Collector−Emitter Voltage V
CES
1000 Vdc
Emitter−Base Voltage V
EBO
5 Vdc
Collector Current − Continuous I
C
2 Adc
Collector Current − Peak (Note 1) I
CM
3.0 Adc
Base Current − Continuous I
B
0.75 Adc
Base Current − Peak (Note 1) I
BM
1.0 Adc
Reverse Base Current − Peak I
BM
1 Adc
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
P
D
50
0.4
W
W/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
2.5
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
T
L
275
_C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
2.0 AMPERES
POWER TRANSISTOR
NPN SILICON
450 VOLTS, 50 WATTS
TO−220
CASE 221A
STYLE 1
1
www.onsemi.com
MARKING DIAGRAM
2
3
BUX85G
AY WW
BUX85 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
Device Package Shipping
ORDERING INFORMATION
BUX85G TO−220
(Pb−Free)
50 Units / Rail
4
1
BASE
3
EMITTER
COLLECTOR
2,4
BUX85G
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2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS (Note 2)
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, (L = 25 mH) See Figure 1
V
CEO(sus)
450 − − Vdc
Collector Cutoff Current
(V
CES
= Rated Value)
(V
CES
= Rated Value, T
C
= 125_C)
I
CES
−
−
−
−
0.2
1.5
mAdc
Emitter Cutoff Current
(V
EB
= 5 Vdc, I
C
= 0)
I
EBO
− − 1 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= 0.1 Adc, V
CE
= 5 V)
h
FE
30 50 − −
Collector−Emitter Saturation Voltage
(I
C
= 0.3 Adc, I
B
= 30 mAdc)
(I
C
= 1 Adc, I
B
= 200 mAdc)
V
CE(sat)
−
−
−
−
0.8
1
Vdc
Base−Emitter Saturation Voltage
(I
C
= 1 Adc, I
B
= 0.2 Adc)
V
BE(sat)
− − 1.1 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 500 mAdc, V
CE
= 1 0 Vdc, f = 1 MHz)
f
T
4 − − MHz
SWITCHING CHARACTERISTICS
Turn−on Time
V
CC
= 250 Vdc, I
C
= 1 A
I
B1
= 0.2 A, I
B2
= 0.4 A
See Figure 2
t
on
− 0.3 0.5
ms
Storage Time t
s
− 2 3.5
ms
Fall Time t
f
− 0.3 −
ms
Fall Time
Same above cond. at T
C
= 95_C
t
f
− − 1.4
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: PW = 300 ms, Duty Cycle ≤2%.
BUX85G
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain Figure 2. V
CE(sat)
, Collector Emitter Saturation
Voltage
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
100.10.010.001
0
20
40
100
30
0.10.01
Figure 3. V
BE(sat)
, Base Emitter Saturation
Voltage
Figure 4. V
BE(on)
, Base Emitter On Voltage
Figure 5. Safe Operating Area (SOA) Figure 6. Power Derating
T
C
, CASE TEMPERATURE (°C)V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
15
0
12510075250
10
30
40
60
1000100101
0.01
0.1
1
10
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
P
D
, POWER DISSIPATION (W)
I
C
, COLLECTOR CURRENT (A)
10
V
CE
= 5 V
T
J
= 25°C
25°C
150°C
−55°C
50
100 ms
50
0
90
1
0.01
0.1
1
1
0.001
20
50
60
70
80
I
C
/ I
B
= 10
I
C
, COLLECTOR CURRENT (A)
0.10.01
V
BE(sat)
, BASE−EMITTER SATURA-
TION VOLTAGE (V)
25°C
150°C
−55°C
0.1
0.6
1.0
10.001
I
C
/ I
B
= 10
0.2
0.7
0.3
0.8
0.4
0.9
0.5
I
C
, COLLECTOR CURRENT (A)
0.10.01
V
BE(on)
, BASE−EMITTER SATURA-
TION VOLTAGE (V)
25°C
150°C
−55°C
0.1
0.6
1.0
10.001
0.2
0.7
0.3
0.8
0.4
0.9
0.5
V
CE
= 5 V
10 ms
1 s
150°C
25°C
−55°C
P1-P3P4-P5

BUX85G

Mfr. #:
Buy BUX85G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 2A 450V 50W NPN
Lifecycle:
New from this manufacturer.
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