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SQ3410EV-T1_GE3

P1-P3P4-P6P7-P9P10-P12
SQ3410EV
www.vishay.com
Vishay Siliconix
S12-1169-Rev. A, 28-May-12
1
Document Number: 67342
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
•TrenchFET
®
Power MOSFET
• AEC-Q101 Qualified
d
•100 % R
g
and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PRODUCT SUMMARY
V
DS
(V) 30
R
DS(on)
() at V
GS
= 10 V 0.0175
R
DS(on)
() at V
GS
= 4.5 V 0.0213
I
D
(A) 8
Configuration Single
N-Channel MOSFET
(3) G
(1, 2, 5, 6) D
(4) S
TSOP-6
Top V iew
6
4
1
2
3
5
2.85 mm
3 mm
Marking Code: 8Gxxx
ORDERING INFORMATION
Package TSOP-6
Lead (Pb)-free and Halogen-free SQ3410EV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
a
I
D
8
A
T
C
= 125 °C 6.8
Continuous Source Current (Diode Conduction) I
S
6.3
Pulsed Drain Current
b
I
DM
32
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
22
Single Pulse Avalanche Energy E
AS
24 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
5
W
T
C
= 125 °C 1.6
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
110
°C/W
Junction-to-Foot (Drain) R
thJF
30
SQ3410EV
www.vishay.com
Vishay Siliconix
S12-1169-Rev. A, 28-May-12
2
Document Number: 67342
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 30 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.5 2.0 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 30 V - - 1
μA V
GS
= 0 V V
DS
= 30 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 30 V, T
J
= 175 °C - - 150
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
5 V 10 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 5 A - 0.014 0.0175
V
GS
= 10 V I
D
= 5 A, T
J
= 125 °C - - 0.030
V
GS
= 10 V I
D
= 5 A, T
J
= 175 °C - - 0.036
V
GS
= 4.5 V I
D
= 4 A - 0.017 0.0213
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 5 A - 25 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 15 V, f = 1 MHz
- 804 1005
pF Output Capacitance C
oss
- 175 219
Reverse Transfer Capacitance C
rss
-6885
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 15 V, I
D
= 5 A
-1421
nC Gate-Source Charge
c
Q
gs
-2.4-
Gate-Drain Charge
c
Q
gd
-2.2-
Gate Resistance R
g
f = 1 MHz 1.5 3.91 7
Turn-On Delay Time
c
t
d(on)
V
DD
= 15 V, R
L
= 3
I
D
5 A, V
GEN
= 10 V, R
g
= 1
-914
ns
Rise Time
c
t
r
-1218
Turn-Off Delay Time
c
t
d(off)
-2030
Fall Time
c
t
f
-711
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
--32A
Forward Voltage V
SD
I
F
= 5 A, V
GS
= 0 V - 0.8 1.2 V
SQ3410EV
www.vishay.com
Vishay Siliconix
S12-1169-Rev. A, 28-May-12
3
Document Number: 67342
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
0
6
12
18
24
30
0 2 4 6 8 10
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 3 V
0.0
0.4
0.8
1.2
1.6
2.0
0 1 2 3 4 5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= - 55 °C
T
C
= 125 °C
0.00
0.01
0.02
0.03
0.04
0.05
0 6 12 18 24 30
R
DS(on)
-On-Resistance (Ω)
I
D
-Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
6
12
18
24
30
0 1 2 3 4 5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
0
10
20
30
40
50
0 2 4 6 8 10 12
g
fs
-Transconductance (S)
I
D
- Drain Current (A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
0
240
480
720
960
1200
0 6 12 18 24 30
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
P1-P3P4-P6P7-P9P10-P12

SQ3410EV-T1_GE3

Mfr. #:
Buy SQ3410EV-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V 8A 5W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
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