A
Microchip Technology Company
©2011 Silicon Storage Technology, Inc. DS25076A 10/11
Data Sheet
www.microchip.com
Features
Single 2.7-3.6V Read and Write Operations
Serial Interface Architecture
SPI Compatible: Mode 0 and Mode 3
20 MHz Max Clock Frequency
Superior Reliability
Endurance: 100,000 Cycles (typical)
Greater than 100 years Data Retention
Low Power Consumption:
Active Read Current: 7 mA (typical)
Standby Current: 8 µA (typical)
Flexible Erase Capability
Uniform 4 KByte sectors
Uniform 32 KByte overlay blocks
Fast Erase and Byte-Program:
Chip-Erase Time: 70 ms (typical)
Sector- or Block-Erase Time: 18 ms (typical)
Byte-Program Time: 14 µs (typical)
Auto Address Increment (AAI) Programming
Decrease total chip programming time over Byte-Pro-
gram operations
End-of-Write Detection
Software Status
Hold Pin (HOLD#)
Suspends a serial sequence to the memory
without deselecting the device
Write Protection (WP#)
Enables/Disables the Lock-Down function of the status
register
Software Write Protection
Write protection through Block-Protection bits in status
register
Packages Available
8-lead SOIC (4.9mm x 6mm)
8-contact WSON
All non-Pb (lead-free) devices are RoHS compliant
512 Kbit SPI Serial Flash
SST25VF512
SST serial flash family features a four-wire, SPI-compatible interface that allows
for a low pin-count package occupying less board space and ultimately lowering
total system costs. SST25VF512 SPI serial flash memory is manufactured with
SST's proprietary, high-performance CMOS SuperFlash technology. The split-
gate cell design and thick-oxide tunneling injector attain better reliability and man-
ufacturability compared with alternate approaches.
©2011 Silicon Storage Technology, Inc. DS25076A 10/11
2
512 Kbit SPI Serial Flash
SST25VF512
Data Sheet
A
Microchip Technology Company
Product Description
SST’s serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count
package occupying less board space and ultimately lowering total system costs. SST25VF512 SPI
serial flash memory is manufactured with SST’s proprietary, high-performance CMOS SuperFlash
technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and man-
ufacturability compared with alternate approaches.
The SST25VF512 device significantly improves performance, while lowering power consumption. The
total energy consumed is a function of the applied voltage, current, and time of application. Since for
any given voltage range, the SuperFlash technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or Program operation is less than alternative
flash memory technologies. The SST25VF512 device operates with a single 2.7-3.6V power supply.
The SST25VF512 device is offered in both 8-lead SOIC and 8-contact WSON packages. See Figure 1
for the pin assignments.
©2011 Silicon Storage Technology, Inc. DS25076A 10/11
3
512 Kbit SPI Serial Flash
SST25VF512
Data Sheet
A
Microchip Technology Company
Block Diagram
1192 B1.5
I/O Buffers
and
Data Latches
SuperFlash
Memory
X - Decoder
Control Logic
Address
Buffers
and
Latches
CE#
Y - Decoder
SCK SI SO WP# HOLD#
Serial Interface

SST25VF512-20-4C-SAE-T

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 512K (64Kx8) 20MHz 2.7-3.6V Commercial
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union