PN2222_J18Z

© Semiconductor Components Industries, LLC, 2010
February, 2010 Rev. 5
1 Publication Order Number:
PN2222/D
PN2222, PN2222A
General Purpose
Transistors
NPN Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage
PN2222
PN2222A
V
CEO
30
40
Vdc
Collector-Base Voltage
PN2222
PN2222A
V
CBO
60
75
Vdc
Emitter-Base Voltage
PN2222
PN2222A
V
EBO
5.0
6.0
Vdc
Collector Current Continuous I
C
600 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction-to-Ambient
R
q
JA
200 °C/W
Thermal Resistance,
Junction-to-Case
R
q
JC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
COLLECTOR
3
2
BASE
1
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO92
CASE 29
STYLE 1
MARKING DIAGRAM
PN
2222
YWW G
G
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
PN2
222A
YWW G
G
PN2222APN2222
PN2222, PN2222A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage PN2222
(I
C
= 10 mAdc, I
B
= 0) PN2222A
V
(BR)CEO
30
40
Vdc
Collector Base Breakdown Voltage PN2222
(I
C
= 10 mAdc, I
E
= 0) PN2222A
V
(BR)CBO
60
75
Vdc
Emitter Base Breakdown Voltage PN2222
(I
E
= 10 mAdc, I
C
= 0) PN2222A
V
(BR)EBO
5.0
6.0
Vdc
Collector Cutoff Current
(V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc) PN2222A
I
CEX
10
nAdc
Collector Cutoff Current
(V
CB
= 50 Vdc, I
E
= 0) PN2222
(V
CB
= 60 Vdc, I
E
= 0) PN2222A
(V
CB
= 50 Vdc, I
E
= 0, T
A
= 125°C) PN2222
(V
CB
= 50 Vdc, I
E
= 0, T
A
= 125°C) PN2222A
I
CBO
0.01
0.01
10
10
mAdc
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0) PN2222A
I
EBO
100
nAdc
Base Cutoff Current
(V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc) PN2222A
I
BL
20
nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, T
A
= 55°C) PN2222A only
(I
C
= 150 mAdc, V
CE
= 10 Vdc) (Note 1)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc) (Note 1)
(I
C
= 500 mAdc, V
CE
= 10 Vdc) (Note 1) PN2222
PN2222A
h
FE
35
50
75
35
100
50
30
40
300
Collector Emitter Saturation Voltage (Note 1)
(I
C
= 150 mAdc, I
B
= 15 mAdc) PN2222
PN2222A
(I
C
= 500 mAdc, I
B
= 50 mAdc) PN2222
PN2222A
V
CE(sat)
0.4
0.3
1.6
1.0
Vdc
Base Emitter Saturation Voltage (Note 1)
(I
C
= 150 mAdc, I
B
= 15 mAdc) PN2222
PN2222A
(I
C
= 500 mAdc, I
B
= 50 mAdc) PN2222
PN2222A
V
BE(sat)
0.6
1.3
1.2
2.6
2.0
Vdc
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (Note 2)
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz) PN2222
PN2222A
f
T
250
300
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
8.0
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz) PN2222
PN2222A
C
ibo
30
25
pF
Input Impedance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) PN2222A
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) PN2222A
h
ie
2.0
0.25
8.0
1.25
kW
Voltage Feedback Ratio
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) PN2222A
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) PN2222A
h
re
8.0
4.0
X 10
4
SmallSignal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) PN2222A
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) PN2222A
h
fe
50
75
300
375
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
PN2222, PN2222A
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
SMALLSIGNAL CHARACTERISTICS
Output Admittance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) PN2222A
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) PN2222A
h
oe
5.0
25
35
200
mMhos
Collector Base Time Constant
(I
E
= 20 mAdc, V
CB
= 20 Vdc, f = 31.8 MHz) PN2222A
rbC
c
150
ps
Noise Figure
(I
C
= 100 mAdc, V
CE
= 10 Vdc, R
S
= 1.0 kW, f = 1.0 kHz) PN2222A
NF
4.0
dB
SWITCHING CHARACTERISTICS (PN2222A only)
Delay Time
(V
CC
= 30 Vdc, V
BE(off)
= 0.5 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc) (Figure 1)
t
d
10 ns
Rise Time t
r
25 ns
Storage Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc) (Figure 2)
t
s
225 ns
Fall Time t
f
60 ns
ORDERING INFORMATION
Device Package Shipping
PN2222G TO92
(PbFree)
5000 Units / Bulk
PN2222AG TO92
(PbFree)
5000 Units / Bulk
PN2222ARLRA TO92 2000 / Tape & Reel
PN2222ARLRAG TO92
(PbFree)
2000 / Tape & Reel
PN2222ARLRM TO92 2000 / Tape & Ammo Box
PN2222ARLRMG TO92
(PbFree)
2000 / Tape & Ammo Box
PN2222ARLRPG TO92
(PbFree)
2000 / Tape & Ammo Box
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Figure 1. TurnOn Time Figure 2. TurnOff Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
-2 V
< 2 ns
0
1.0 to 100 ms,
DUTY CYCLE 2.0%
1 kW
+30 V
200
C
S
* < 10 pF
+16 V
-14 V
0
< 20 ns
1.0 to 100 ms,
DUTY CYCLE 2.0%
1 k
+30 V
200
C
S
* < 10 pF
-4 V
1N914

PN2222_J18Z

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TRANS NPN 30V 0.6A TO-92
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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