MBRF25150CTHC0G

CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Halogen-free according to IEC 61249-2-21
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
35 45 50 60 90 100 150 V
V
RMS
24 31 35 42 63 70 105 V
V
DC
35 45 50 60 90 100 150 V
I
F(AV)
A
0.95
0.92
1.02
0.98
5
dV/dt V/μs
T
J
°C
T
STG
°C
Document Number: DS_D1310013 Version: K15
MBRF2535CT - MBRF25150CT
Taiwan Semiconductor
25A, 35V - 150V Dual Common Cathode Schottk
y
Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
ITO-220AB
MECHANICAL DATA
Case: ITO-220AB
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER SYMBOL
MBRF
2535
CT
MBRF
2545
CT
MBRF
2550
CT
MBRF
2560
CT
MBRF
2590
CT
MBRF
25100
CT
MBRF
25150
CT
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 25
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
200 A
0.75
Maximum instantaneous forward voltage (Note 1)
I
F
=12.5A, T
J
=25°C
I
F
=12.5A, T
J
=125°C
I
F
=25A, T
J
=25°C
I
F
=25A, T
J
=125°C
V
F
0.85
0.65 0.75
0.82 - 0.92
Note 1: Pulse test with PW=300μs, 1% duty cycle
Peak repetitive forward current
(Rated V
R
, Square wave, 20KHz)
I
FRM
25 A
Operating junction temperature range - 55 to +150
Storage temperature range - 55 to +150
Typical thermal resistance
R
θJC
R
θJA
1
8
Voltage rate of change (Rated V
R
)
10000
°C/W
20.1
7.5
V-
mA
15 10
-
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
-0.880.73
I
R
PART NO.
*: Optional available
PART NO.
(T
A
=25°C unless otherwise noted)
Document Number: DS_D1310013 Version: K15
MBRF2560CTMBRF2560CTHC0G
PACKING
PART NO.
SUFFIX
HGC0
AEC-Q101 qualified
Green compound
DESCRIPTION
Note 1: "xx" defines voltage from 35V (MBRF2535CT) to 150V (MBRF25150CT)
MBRF2535CT - MBRF25150CT
Taiwan Semiconductor
PACKING
CODE
PACKING CODE
SUFFIX
(*)
PACKAGE
ORDERING INFORMATION
PART NO.
SUFFIX
H 50 / Tube
RATINGS AND CHARACTERISTICS CURVES
PREFERRED P/N PACKING CODE
PACKING CODE
SUFFIX
EXAMPLE
MBRF25xxCT
(Note 1)
C0 G ITO-220AB
0
5
10
15
20
25
30
50 60 70 80 90 100 110 120 130 140 150
AVERAGE FORWARD CURRENT (A)
CASE TEMPERATURE (
°
C)
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVE LOAD
WITH HEATSINK
100
125
150
175
200
225
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT PER LEG
8.3ms Single Half Sine Wave
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
T
J
=25°C
T
J
=125°C
MBRF2535CT - 2545CT
MBRF2550CT - 25150CT
0.01
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
Pulse Width=300μs
1% Duty Cycle
MBRF2535CT - 2545CT
MBRF2550CT - 2560CT
MBRF2590CT - 25150CT
T
J
=25°C
T
J
=125°C
Min Max Min Max
A 4.30 4.70 0.169 0.185
B 2.50 3.16 0.098 0.124
C 2.30 2.96 0.091 0.117
D 0.46 0.76 0.018 0.030
E 6.30 6.90 0.248 0.272
F 9.60 10.30 0.378 0.406
G 3.00 3.40 0.118 0.134
H 0.95 1.45 0.037 0.057
I 0.50 0.90 0.020 0.035
J 2.40 3.20 0.094 0.126
K 14.80 15.50 0.583 0.610
L - 4.10 - 0.161
M 12.60 13.80 0.496 0.543
N - 1.80 - 0.071
O 2.41 2.67 0.095 0.105
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1310013 Version: K15
MARKING DIAGRAM
MBRF2535CT - MBRF25150CT
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm) Unit (inch)
ITO-220AB
100
1000
10000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG
f=1.0MHz
Vsig=50mVp-p
MBRF2535CT - 2560CT
MBRF2590CT - 25150CT
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE (°C/W)
T-PULSE DURATION(s)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG

MBRF25150CTHC0G

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
DIODE ARRAY SCHOTT 150V ITO220AB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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